Numerical and experimental analysis of single crystal diamond schottky barrier diodes

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2005, Pages 315-318

  Rashid, S J ^a   Coulbeck, L ^b   Tajani, A ^c   Brezeanu, M ^a   Garraway, A ^b   Butler, T ^a   Rupesinghe, N L ^a   Twitchen, D J ^c   Amaratunga, G A J ^a   Udrea, F ^a   Taylor, P ^b   Dixon, M ^c   Isberg, J ^d  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b DYNEX SEMICONDUCTOR LTD   (United Kingdom)

^c ELEMENT SIX LTD   (United Kingdom)

^d UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DIAMONDS; MATHEMATICAL MODELS; SINGLE CRYSTALS;

BORON DOPED SUBSTRATES; CARRIER ACTIVATION; DIAMOND LAYERS; TURN ON VOLTAGE;

SCHOTTKY BARRIER DIODES;

EID: 27744585425     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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