SCOPUS 정보 검색 플랫폼

Volumn 518, Issue 22, 2010, Pages 6334-6338

Uniformity of gallium doped zinc oxide thin film prepared by pulsed laser deposition

(4) Mitsugi, Fumiaki a Umeda, Yoshihiro a Sakai, Norihiro a Ikegami, Tomoaki a

Author keywords

Amorphous gallium doped zinc oxide; Large area deposition; Pulsed laser deposition; Room temperature deposition; Transparent conducting oxide

Indexed keywords

GALLIUM DOPED ZINC OXIDES; LARGE-AREA DEPOSITION; PULSED LASER; ROOM TEMPERATURE DEPOSITION; TRANSPARENT CONDUCTING OXIDE;

CARRIER CONCENTRATION; CARRIER MOBILITY; CONDUCTIVE FILMS; DIFFRACTION; ELECTRIC PROPERTIES; FILM PREPARATION; FILM THICKNESS; GALLIUM; GLASS LASERS; HOLOGRAPHIC INTERFEROMETRY; OXIDE FILMS; PULSED LASER DEPOSITION; PULSED LASERS; SILICA; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; ZINC; ZINC OXIDE;

DEPOSITION;

EID: 77956058188 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.03.044 Document Type: Conference Paper

Times cited : (31)

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