Transparent conducting ZnO thin films prepared at room temperature by PLD method

IEEJ Transactions on Electronics, Information and Systems

Volumn 126, Issue 11, 2006, Pages 1268-1275

  Agura, Hideaki ^a   Takase, Vasunori ^a   Uehara, Kenji ^a   Nakamura, Atsuhiro ^a   Higashimura, Yoshinori ^a   Aoki, Takanori ^a   Suzuki, Akio ^a   Matsushita, Tatsuhiko ^a   Okuda, Masahiro ^b   Okinaka, Hirokazu ^c  

^a OSAKA SANGYO UNIVERSITY   (Japan)

^b Okuda Technical Office   (Japan)

^c HITACHI HIGH TECHNOLOGIES CORPORATION   (Japan)

Author keywords

Crystal structure; Pulsed laser deposition method; Transparent conducting oxide films; Zinc oxide

Indexed keywords

ALUMINUM; CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; DOPING (ADDITIVES); PULSED LASER DEPOSITION; THIN FILMS;

AL-DOPED ZINC OXIDE (AZO) FILMS; GA-DOPED ZINC OXIDE (GZO) FILMS; PULSED LASER DEPOSITION METHOD; TRANSPARENT CONDUCTING OXIDE FILMS;

ZINC OXIDE;

EID: 33750903193     PISSN: 03854221     EISSN: 13488155     Source Type: Journal    
DOI: 10.1541/ieejeiss.126.1268     Document Type: Article

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