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Journal of Applied Physics

Volumn 108, Issue 3, 2010, Pages

Strain effects on the performance of zero-Schottky-barrier double-walled carbon nanotube transistors

(2) Wahab, Md Abdul a Khosru, Quazi D M a

a BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY (Bangladesh)

Author keywords

[No Author keywords available]

Indexed keywords

CNT FETS; COMPRESSIVE STRAIN; DOUBLE-WALLED; DOUBLE-WALLED CARBON NANOTUBES; EFFECT OF STRAIN; IV CHARACTERISTICS; OFF-STATE CURRENT; ON STATE CURRENT; ON/OFF CURRENT RATIO; POISSON'S EQUATION; SCHOTTKY BARRIERS; SCHRODINGER'S EQUATION; SINGLE-WALLED; STRAIN EFFECT; SUBTHRESHOLD SLOPE; TORSIONAL STRAIN; TRANSPORT PHYSICS;

CARBON NANOTUBES; CEMENTS; FIELD EFFECT TRANSISTORS; GREEN'S FUNCTION; MULTIWALLED CARBON NANOTUBES (MWCN); POISSON EQUATION; RECURSIVE FUNCTIONS; SCHRODINGER EQUATION; TRANSCONDUCTANCE;

STRAIN;

EID: 77955876037 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3465083 Document Type: Article

Times cited : (1)

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