Investigation of state retention in metal-ferroelectric-insulator- semiconductor structures based on Langmuir-Blodgett copolymer films

Journal of Applied Physics

Volumn 108, Issue 2, 2010, Pages

  Reece, Timothy J ^a   Gerber, A ^b,c   Kohlstedt, H ^b   Ducharme, Stephen ^a  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c UNIVERSITY OF KIEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM-GATE; BISTABLES; CERIUM OXIDE BUFFER LAYER; COPOLYMER FILMS; DOPED SILICON; EPITAXIAL FERROELECTRIC; FERROELECTRIC COPOLYMERS; LANGMUIR-BLODGETT; LOW COSTS; LOW DIELECTRIC CONSTANTS; LOW PROCESSING TEMPERATURE; MEMORY ELEMENT; METAL FERROELECTRIC INSULATOR SEMICONDUCTORS; METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR STRUCTURES; NONVOLATILE MEMORY DEVICES; OPERATING RANGES; ORGANIC SEMICONDUCTOR; POLYVINYLIDENE FLUORIDES; RETENTION PROPERTIES; STATE-RETENTION; TRIFLUOROETHYLENE; WIDE HYSTERESIS;

CERIUM; CERIUM COMPOUNDS; COPOLYMERIZATION; DIELECTRIC MATERIALS; FERROELECTRIC FILMS; FERROELECTRIC THIN FILMS; FERROELECTRICITY; NONVOLATILE STORAGE; PROCESSING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

LANGMUIR BLODGETT FILMS;

EID: 77955829970     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3452331     Document Type: Article

References (41)

1. P. Juan, Y. Hu, F. Chiu, and J. Y. Lee, J. Appl. Phys. JAPIAU 0021-8979 98, 044103 (2005). 10.1063/1.2014935
2. J. C. Crawford, IEEE Trans. Electron Devices IETDAI 0018-9383 18, 951 (1971). 10.1109/T-ED.1971.17309
3. T. D. Hadnagy, Integr. Ferroelectr. IFEREU 1058-4587 18, 1 (1997). 10.1080/10584589708221681
4. I. M. Ross, " Semiconductor translating device.," U.S. Patent No. 2791760 (7 May 1957).
5. J. L. Moll and Y. Tarui, IEEE Trans. Electron Devices IETDAI 0018-9383 10, 338 (1963). 10.1109/T-ED.1963.15245
6. K. Sugibuchi, Y. Kurogi, and N. Endo, J. Appl. Phys. JAPIAU 0021-8979 46, 2877 (1975). 10.1063/1.322014
7. J. L. Sun, X. J. Meng, J. H. Ma, T. Lin, J. Chen, N. Dai, and J. H. Chu, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396 81, 389 (2005). 10.1007/s00339-004-2564-7
8. Y. Fujisaki, T. Kijima, and H. Ishiwara, Appl. Phys. Lett. APPLAB 0003-6951 78, 1285 (2001). 10.1063/1.1351535
9. C. -L. Sun, S. -Y. Chen, S. -B. Chen, and A. Chin, Appl. Phys. Lett. APPLAB 0003-6951 80, 1984 (2002). 10.1063/1.1459115
10. C. -Y. Chang, T. P.-C. Juan, and J. Y.-M. Lee, Appl. Phys. Lett. APPLAB 0003-6951 88, 072917 (2006). 10.1063/1.2177549
11. S. -B. Xiong and S. Sakai, Appl. Phys. Lett. APPLAB 0003-6951 75, 1613 (1999). 10.1063/1.124771
12. T. Furukawa, Phase Transitions PHTRDP 0141-1594 18, 143 (1989). 10.1080/01411598908206863
13. H. S. Nalwa, Ferroelectric Polymers (Dekker, New York, 1995), p. 895.
14. T. Furukawa, T. Nakajima, and Y. Takahashi, IEEE Trans. Dielectr. Electr. Insul. ITDIES 1070-9878 13, 1120 (2006).
15. T. T. Wang, J. M. Herbert, and A. M. Glass, The Applications of Ferroelectric Polymers (Blackie/Chapman and Hall, Glasgow, 1988).
16. N. Yamauchi, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 25, 590 (1986). 10.1143/JJAP.25.590
17. S. H. Lim, A. C. Rastogi, and S. B. Desu, J. Appl. Phys. JAPIAU 0021-8979 96, 5673 (2004). 10.1063/1.1785836
18. R. Schroeder, A. Majewski, M. Voight, and M. Grell, IEEE Electron Device Lett. EDLEDZ 0741-3106 26, 69 (2005). 10.1109/LED.2004.841186
19. R. C. G. Naber, C. Tanase, P. W. M. Blom, G. H. Gelinck, A. W. Marsman, F. J. Touwslager, S. Setayesh, and D. M. de Leeuw, Nature Mater. NMAACR 1476-1122 4, 243 (2005). 10.1038/nmat1329
20. B. Stadlober, M. Zirkl, M. Beutl, G. Leising, S. Bauer-Gogonea, and S. Bauer, Appl. Phys. Lett. APPLAB 0003-6951 86, 242902 (2005). 10.1063/1.1946190
21. R. C. G. Naber, J. Massolt, M. Spijkman, K. Asadi, P. W. M. Blom, and D. M. de Leeuw, Appl. Phys. Lett. APPLAB 0003-6951 90, 113509 (2007). 10.1063/1.2713856
22. K. Asadi, D. M. de Leeuw, B. de Boer, and P. W. M. Blom, Nature Mater. NMAACR 1476-1122 7, 547 (2008). 10.1038/nmat2207
23. A. V. Bune, V. M. Fridkin, S. Ducharme, L. M. Blinov, S. P. Palto, A. V. Sorokin, S. G. Yudin, and A. Zlatkin, Nature (London) NATUAS 0028-0836 391, 874 (1998). 10.1038/36069
24. S. Ducharme, S. P. Palto, and V. M. Fridkin, in Ferroelectric and Dielectric Thin Films, edited by, H. S. Nalwa, (Academic, San Diego, 2002), Vol. 3, pp. 545-591.
25. Y. T. Kim, C. W. Lee, D. S. Shin, and H. N. Lee, Proceedings of the Eleventh IEEE International Symposium on Applications of Ferroelectrics, 24-27 Aug., Montreaux, Switzerland (IEEE, Piscataway, NJ, 1998), pp. 35-38.
26. A. D. Li, Y. J. Wang, Q. Y. Shao, J. B. Cheng, D. Wu, H. Q. Ling, Y. J. Bao, M. Wang, Z. G. Liu, and N. B. Ming, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396 81, 1273 (2005). 10.1007/s00339-004-3021-3
27. T. P. Ma and J. -P. Han, IEEE Electron Device Lett. EDLEDZ 0741-3106 23, 386 (2002). 10.1109/LED.2002.1015207
28. M. E. Lines and A. M. Glass, Principles and Applications of Ferroelectrics and Related Materials (Clarendon, Oxford, 1977).
29. I. P. Batra and B. D. Silverman, Solid State Commun. SSCOA4 0038-1098 11, 291 (1972). 10.1016/0038-1098(72)91180-5
30. M. Takahashi, H. Sugiyama, T. Nakaiso, K. Kodama, M. Noda, and M. Okuyama, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 40, 2923 (2001). 10.1143/JJAP.40.2923
31. J. Choi, C. N. Borca, P. A. Dowben, A. Bune, M. Poulsen, S. Pebley, S. Adenwalla, S. Ducharme, L. Robertson, V. M. Fridkin, S. P. Palto, N. N. Petukhova, and S. G. Yudin, Phys. Rev. B PRBMDO 0163-1829 61, 5760 (2000). 10.1103/PhysRevB.61.5760
32. Y. Tokuda and T. Seki, Semicond. Sci. Technol. SSTEET 0268-1242 15, 126 (2000). 10.1088/0268-1242/15/2/308
33. T. J. Reece, S. Ducharme, A. V. Sorokin, and M. Poulsen, Appl. Phys. Lett. APPLAB 0003-6951 82, 142 (2003). 10.1063/1.1533844
34. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
35. M. Bai, A. V. Sorokin, D. W. Thompson, M. Poulsen, S. Ducharme, C. M. Herzinger, S. Palto, V. M. Fridkin, S. G. Yudin, V. E. Savchenko, and L. K. Gribova, J. Appl. Phys. JAPIAU 0021-8979 95, 3372 (2004). 10.1063/1.1649464
36. S. L. Miller and P. J. McWhorter, J. Appl. Phys. JAPIAU 0021-8979 72, 5999 (1992). 10.1063/1.351910
37. T. J. Reece, A. V. Sorokin, and S. Ducharme, Nonvolatile Bistable Electronic Memory Based on Ferroelectric Polymer Langmuir-Blodgett Films, USA (2003).
38. L. V. Hai, T. Kanashima, and M. Okuyama, Integr. Ferroelectr. IFEREU 1058-4587 84, 179 (2006). 10.1080/10584580601085784
39. S. Ducharme, V. M. Fridkin, A. Bune, L. M. Blinov, S. P. Palto, and S. G. Yudin, Phys. Rev. Lett. PRLTAO 0031-9007 84, 175 (2000). 10.1103/PhysRevLett. 84.175
40. A. V. Sorokin, S. Ducharme, and V. M. Fridkin, J. Appl. Phys. JAPIAU 0021-8979 98, 044107 (2005). 10.1063/1.2006228
41. L. Malin, I. Stolichnov, and N. Setter, J. Appl. Phys. JAPIAU 0021-8979 102, 114101 (2007). 10.1063/1.2817646