Improvement of memory retention in metal-ferroelectric-insulator- semiconductor structure by SrBi2Ta2O9 surface modification induced by nitrogen and oxygen radical irradiation

Integrated Ferroelectrics

Volumn 84, Issue 1, 2006, Pages 179-188

  Hai, Le Van ^a   Kanashima, Takeshi ^a   Okuyama, Masanori ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Memory window; MFIS; SBT; SEM; SrBi2Ta2O9; UV PYS; XPS

Indexed keywords

EID: 57649192182     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584580601085784     Document Type: Conference Paper

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