Effect of insulator on memory window of metal-ferroelectric-insulator-semiconductor-field effect transistor (MEFISFET)-non destructive readout memory devices

IEEE International Symposium on Applications of Ferroelectrics

Volumn , Issue , 1998, Pages 35-38

  Kim, Y T ^a   Lee, C W ^a   Shin, D S ^a   Lee, H N ^a  

^a Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CERIUM COMPOUNDS; COERCIVE FORCE; ELECTRIC CURRENTS; ELECTRIC INSULATING MATERIALS; ELECTRIC POTENTIAL; FERROELECTRIC DEVICES; GATES (TRANSISTOR); MAGNETIC FILMS; MISFET DEVICES; READOUT SYSTEMS; STRONTIUM COMPOUNDS; YTTRIUM COMPOUNDS;

FERROELECTRIC RANDOM ACCESS MEMORY (FERAM); METAL FERROELECTRIC INSULATOR SEMICONDUCTOR FIELD EFFECT TRANSISTORS; NONDESTRUCTIVE READOUT MEMORY;

RANDOM ACCESS STORAGE;

EID: 0032283021     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)