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Volumn 481, Issue 1-3, 2002, Pages 204-221

A measurement of Lorentz angle and spatial resolution of radiation hard silicon pixel sensors

(80)  Gorelov, I a   Gorfine, G a   Hoeferkamp, M a   Seidel, S C a   Ciocio, A b   Einsweiler, K b   Gilchriese, M b   Joshi, A b   Kleinfelder, S b   Marchesini, R b   Milgrome, O b   Palaio, N b   Pengg, F b   Richardson, J b   Zizka, G b   Ackers, M c   Fischer, P c   Keil, M c   Meuser, S c   Stockmanns, T c   more..


Author keywords

Depletion depth; LHC; Lorentz angle; Radiation hardness; Silicon pixel detectors; Spatial resolution

Indexed keywords

ALGORITHMS; ELECTRIC FIELDS; IRRADIATION; MAGNETIC FIELD EFFECTS; RADIATION HARDENING;

EID: 0036534262     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(01)01413-9     Document Type: Article
Times cited : (39)

References (22)
  • 9
    • 0035399123 scopus 로고    scopus 로고
    • Contributions to the 4th International Symposium on Development and Application of Semiconductor Tracking Detectors, Hiroshima, March 2000
    • (2001) Nucl. Instr. and Meth. A , vol.466 , pp. 327
    • Wunstorf, R.1
  • 17
    • 0037147867 scopus 로고    scopus 로고
    • Carrier mobilities in irradiated silicon, Contributions to the 5th Conference on Position Sensitive Detectors, London, September 1999
    • (2002) Nucl. Instr. and Meth. A , vol.477 , pp. 287
    • Brodbeck, T.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.