Charge-collection efficiency of heavily irradiated silicon diodes operated with an increased free-carrier concentration and under forward bias

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 533, Issue 3, 2004, Pages 442-453

  Mandic I ^a,b   Cindro, V ^a   Kramberger, G ^a   Mikuz M ^a   Zavrtanik, M ^a  

^a UNIVERSITY OF LJUBLJANA   (Slovenia)

^b JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

Continuous carrier injection; Effective carrier trapping time; Effective space charge; Forward bias; Silicon detectors

Indexed keywords

CRYOSTATS; ELECTRIC SPACE CHARGE; MATHEMATICAL MODELS; OPTICAL COLLIMATORS; PARTICLE DETECTORS; PROBABILITY; TEMPERATURE CONTROL;

CARRIER INJECTION; EFFECTIVE SPACE CHARGE; FORWARD BIAS; SILICON DETECTORS;

SEMICONDUCTOR DIODES;

EID: 7444221828     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2004.06.134     Document Type: Article

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