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Volumn 51, Issue 6 I, 2004, Pages 3055-3062

Measurement of trapping time constants in proton-irradiated silicon pad detectors

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARGE CARRIERS; OPTIMIZATION; PROBABILITY; PROTONS; SILICON;

EID: 3342964086     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839096     Document Type: Conference Paper
Times cited : (43)

References (11)
  • 1
    • 34748899189 scopus 로고    scopus 로고
    • ATLAS pixel detector community
    • ATLAS TDR 11, CERN/LHCC 98-13, May 31
    • "ATLAS pixel detector community," ATLAS Pixel Detector Tech. Design Rep., ATLAS TDR 11, CERN/LHCC 98-13, May 31, 1998.
    • (1998) ATLAS Pixel Detector Tech. Design Rep.
  • 2
    • 0036533748 scopus 로고    scopus 로고
    • Effective trapping time of electrons and holes in different silicon materials irradiated with neutrons, protons and pions
    • G. Kramberger, V. Cindro, I. Mandic, M. Mikuz, and M. Zavrtanik, "Effective trapping time of electrons and holes in different silicon materials irradiated with neutrons, protons and pions," Nucl. Instrum. Methods A, vol. 481, pp. 297-305, 2002.
    • (2002) Nucl. Instrum. Methods A , vol.481 , pp. 297-305
    • Kramberger, G.1    Cindro, V.2    Mandic, I.3    Mikuz, M.4    Zavrtanik, M.5
  • 3
    • 21544448810 scopus 로고
    • Currents induced by electron motion
    • S. Ramo, "Currents induced by electron motion," in Proc. IRE 27, 1939, p. 584.
    • (1939) Proc. IRE , vol.27 , pp. 584
    • Ramo, S.1
  • 6
    • 36149015973 scopus 로고
    • Intrinsic optical absorption in single-crystal germanium and silicon at 77 K and 300 K
    • W. C. Dash and R. Newman, "Intrinsic optical absorption in single-crystal germanium and silicon at 77 K and 300 K," Phys. Rev., vol. 99, p. 1151, 1955.
    • (1955) Phys. Rev. , vol.99 , pp. 1151
    • Dash, W.C.1    Newman, R.2
  • 9
    • 0141908507 scopus 로고    scopus 로고
    • (Dec.), CERN/LHCC 2000/09. [Online]
    • (1999, Dec.) 3rd RD48 Status Rep., CERN/LHCC 2000/09. [Online]http://rd48.web.cern.ch/RD48/
    • (1999) 3rd RD48 Status Rep.
  • 11
    • 11044224058 scopus 로고    scopus 로고
    • RD50 collaboration at CERN (radiation hard semiconductor devices for very high luminosity colliders), Geneva, Switzerland. [Online]
    • RD50 collaboration at CERN (radiation hard semiconductor devices for very high luminosity colliders), Geneva, Switzerland. [Online]http://rd50.web.cern. ch/rd50/


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.