Electrical properties of the sensitive side in Si edgeless detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 604, Issue 1-2, 2009, Pages 246-249

  Verbitskaya, E ^a   Ruggiero, G ^b   Eremin, I ^a   Ilyashenko, I ^a   Cavallini, A ^c   Castaldini, A ^c   Pellegrini, G ^d   Lozano, M ^d   Golubkov, S ^e   Egorov, N ^e   Konkov, K ^e   Tuuva, T ^f  

^a IOFFE INSTITUTE   (Russian Federation)

^b CERN   (Switzerland)

^c UNIVERSITY OF BOLOGNA   (Italy)

^d INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^e RIMST   (Russian Federation)

^f LAPPEENRANTA UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

Electric field distribution; Radiation hardness; Silicon edgeless detectors

Indexed keywords

2D ARRAYS; APPLIED VOLTAGES; DETECTOR PERFORMANCE; EDGELESS DETECTORS; ELECTRIC FIELD DISTRIBUTION; ELECTRICAL PROPERTY; FLUENCES; KEY FACTORS; KEY INPUT; MICRO-PROBE; POSITIVELY CHARGED; POTENTIAL DISTRIBUTIONS; RADIATION HARD DETECTORS; RADIATION HARDNESS; RADIATION IMAGING; TRANSIENT CURRENT TECHNIQUE;

ELECTRIC FIELD MEASUREMENT; ELECTRIC FIELDS; ELECTRIC PROPERTIES; HARDNESS; HIGH ENERGY PHYSICS; SILICON DETECTORS;

RADIATION DETECTORS;

EID: 66049093867     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2009.01.055     Document Type: Article

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