Investigation of voltages and electric fields in silicon radiation detectors using a scanning electron microscope

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 555, Issue 1-2, 2005, Pages 411-419

  Leinonen, Kari ^a  

^a LAPPEENRANTA UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

Electric field; Radiation detector; Scanning electron microscope; Silicon; Voltage; Voltage contrast

Indexed keywords

CAPACITANCE; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; MATHEMATICAL MODELS; SCANNING ELECTRON MICROSCOPY; SILICON;

CAPACITANCE-VOLTAGE; QUANTITATIVE METHODS; VOLTAGE-CONSTRAST;

RADIATION DETECTORS;

EID: 28044456509     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.07.075     Document Type: Article

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