EXAFS studies of Mg doped InN grown on Al2O3

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 218-221

  Blant, A V ^a   Cheng, T S ^a   Jeffs, N J ^a   Flannery, L B ^a   Harrison, I ^a   Mosselmans, J F W ^b   Smith, A D ^b   Foxon, C T ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b DARESBURY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CRYSTAL LATTICES; MAGNESIUM; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; X RAY DIFFRACTION ANALYSIS; X RAY SPECTROSCOPY;

EXTENDED X RAY ABSORPTION FINE STRUCTURE SPECTROSCOPY; INDIUM NITRIDE; STRUCTURAL PROPERTIES;

SEMICONDUCTING FILMS;

EID: 0033528951     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00394-8     Document Type: Article

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