Stacking faults and phase changes in Mg-doped InGaN grown on Si

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Hawkridge, Michael E ^a   Liliental Weber, Zuzanna ^a   Yu, Kin M ^a   Reichertz, Lothar A ^a   Schaff, William J ^b   Ager, Joel W ^a   Walukiewicz, Wladek ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BASAL STACKING FAULTS; CUBIC PHASE; HIGH DENSITY; MG CONCENTRATIONS; MG-DOPED; PHASE CHANGE; SELECTED AREA DIFFRACTION PATTERNS; SI(111) SUBSTRATE; WURTZITE PHASE; ZINC BLENDE;

BUFFER LAYERS; DIFFRACTION; EPITAXIAL LAYERS; GALLIUM; HIGH RESOLUTION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL WAVEGUIDES; PHASE TRANSITIONS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; ZINC SULFIDE;

STACKING FAULTS;

EID: 77955779759     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880978     Document Type: Article

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