A study of MIS - AlGaN/GaN HEMTs with SiO2 films as gate insulator

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2005, Pages 307-310

  Sugimoto, M ^a   Kodama, M ^b   Soejima, N ^b   Hayashi, E ^b   Uesugi, T ^b   Kachi, T ^b  

^a TOYOTA MOTOR CORPORATION   (Japan)

^b Rd Management Section   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC INSULATORS; ELECTRIC RESISTANCE; GALLIUM NITRIDE; THIN FILMS;

DRAIN CURRENT; GATE INSULATOR; HTO DEPOSITION METHOD; MIS-HEMT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 27744456239     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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