p-Type InGaN cap layer for normally off operation in AlGaN/GaN heterojunction field effect transistors

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 2817-2819

  Shimizu, Mitsuaki ^a   Piao, Guaxi ^a   Inada, Masaki ^a   Yagi, Syuichi ^a   Yano, Yoshiki ^b   Akutsu, Nakao ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TAIYO NIPPON SANSO CORPORATION   (Japan)

Author keywords

AlGaN GaN heterojunction field effect transistor; Normally off operation; p InGaN cap layer

Indexed keywords

DRAIN CURRENT; ELECTRON MULTIPLIERS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MOSFET DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; THRESHOLD LOGIC;

ALGAN/GAN HETEROJUNCTION FIELD EFFECT TRANSISTOR; ALGAN/GAN HETEROJUNCTIONS; CAP LAYERS; GATE ELECTRODES; GATE LENGTHS; MAXIMUM DRAIN CURRENTS; MAXIMUM TRANSCONDUCTANCES; NORMALLY OFF OPERATION; NORMALLY OFF OPERATIONS; P-INGAN CAP LAYER; RF CHARACTERISTICS; THRESHOLD GATE VOLTAGES;

FIELD EFFECT TRANSISTORS;

EID: 54249124992     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2817     Document Type: Article

References (6)

1. T. Hashizume, S. Anantathanasarn, N. Negoro, E. Sano, H. Hasegawa, K. Kumakura, and T. Makimoto: Jpn. J. Appl. Phys. 43 (2004) L777.
2. A. Endoh, Y. Yamashita, K. Ikeda, M. Higashiwaki, K. Hikosaka, T. Matsui, S. Hiyamizu, and T. Mimura: Jpn. J. Appl. Phys. 43 (2004) 2255.
3. M. Asif Khan, Q. Chen, C. J. Sun, J. W. Yang, and M. Blasingame: Appl. Phys. Lett. 68 (1996) 514.
4. W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, and I. Omura: IEEE Trans. Electron Devices 53 (2006) 356.
5. T. Kawasaki, K. Nakata, and S. Yaegassi: Ext. Abstr. Solid State Devices and Materials, 2005, p. 206.
6. N. Tsuyokuchi, K. Nagamatsu, Y. Hirose, M. Iwaya, S. Karaiyama, H. Amano, and I. Akasaki: Jpn. J. Appl. Phys. 45 (2006) L319.