Width and orientation effects in strained FDSOI MOSFETs: Strain and device characterization

ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Volumn , Issue , 2009, Pages 391-394

  Baudot, S ^a   Eymery, J ^a   Andrieu, F ^b   Vidal, V ^b   Allain, F ^b   Brevard L ^b   Faynot, O ^b  

^a CEA GRENOBLE   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL STRAINS; C-V METHOD; CHANNEL ORIENTATIONS; DEVICE CHARACTERIZATION; EFFECTIVE MASS; FULLY DEPLETED SILICON-ON-INSULATOR; MOSFETS; ORIENTATION EFFECT; P-MOSFETS; TIN GATES;

ELECTRON MOBILITY; MOSFET DEVICES; SOLS; TITANIUM NITRIDE; X RAY DIFFRACTION ANALYSIS;

TENSILE STRAIN;

EID: 72849131355     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2009.5331541     Document Type: Conference Paper

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