Fabrication and vacuum annealing of transparent conductive Ga-doped Zn 0.9 Mg 0.1 O thin films prepared by pulsed laser deposition technique

Applied Surface Science

Volumn 252, Issue 24, 2006, Pages 8657-8661

  Chen, Zhiqiang ^a   Fang, Guojia ^a   Li, Chun ^a   Sheng, Su ^a   Jie, Guanwen ^a   Zhao, Xing Zhong ^a  

^a WUHAN UNIVERSITY   (China)

Author keywords

Band gap energy; Pulsed laser deposition (PLD); Substrate temperature; Vacuum annealing; ZMO:Ga films

Indexed keywords

ANNEALING; DOPING (ADDITIVES); ENERGY GAP; GALLIUM; PULSED LASER DEPOSITION; TRANSPARENCY; VACUUM; ZINC COMPOUNDS;

BAND GAP ENERGY; SUBSTRATE TEMPERATURE; VACUUM ANNEALING;

THIN FILMS;

EID: 33749146118     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.12.018     Document Type: Article

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