Performance of top-gate thin film transistors with solution processed ZnO channel layer and PVP gate dielectric

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 7, 2010, Pages 1664-1667

  Nayak, Pradipta K ^a   Kim, Jinwoo ^a   Lee, Changhee ^a   Hong, Yongtaek ^a  

^a Seoul National University   (South Korea)

Author keywords

Organic dielectric; Performance; Sol gel method; Thin film transistors; ZnO

Indexed keywords

CHANNEL LAYERS; COST EFFECTIVE; DIELECTRIC LAYER; ON/OFF RATIO; ORGANIC DIELECTRICS; OXYGEN ANNEALING; PERFORMANCE; POLY(4-VINYLPHENOL); SATURATION FIELDS; SATURATION MOBILITY; SOL-GEL METHOD; SOLUTION-PROCESSED; TECHNOLOGICAL APPLICATIONS; TRANSPARENT ELECTRONICS; VISIBLE REGION; ZNO;

GATE DIELECTRICS; GATES (TRANSISTOR); GELS; OXYGEN; SOL-GEL PROCESS; SOL-GELS; SOLS; THIN FILMS; VAPOR DEPOSITION; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 77955600580     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200983714     Document Type: Article

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