Top-gate ZnO thin-film transistors with a polymer dielectric designed for ultraviolet optical gating

Sensors and Actuators, A: Physical

Volumn 144, Issue 1, 2008, Pages 69-73

  Lee, Kimoon ^a   Choi, Jeong M ^a   Hwang, D K ^a   Oh, Min Suk ^a   Kim, J K ^b   Jung, Y ^b   Oh, K ^a   Im, Seongil ^a  

^a Yonsei University   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Optical gating; Thin film transistor; UV detector; ZnO

Indexed keywords

DARK CURRENTS; GATE DIELECTRICS; ORGANIC POLYMERS; PHOTOTRANSISTORS; ULTRAVIOLET DETECTORS; ZINC OXIDE;

FIELD EFFECT MOBILITY; OPTICAL GATING;

THIN FILM TRANSISTORS;

EID: 42949151791     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2008.01.012     Document Type: Article

References (16)

1. Fortunato E.M.C., Barquinha P.M.C., Pimental A.C.M.B.G., Gonζalves A.M.F., Marques A.J.S., Pereira L.M.N., and Martins R.F.P. Fully transparent ZnO thin-film transistor produced at room temperature. Adv. Mater. 17 (2005) 590-594
2. Nishii J., Hossain F.M., Takagi S., Aita T., Saokusa K., Ohmaki Y., Ohkubo I., Kishimoto S., Ohtomo A., Fukumura T., Matsukura F., Ohno Y., Koinuma H., Ohno H., and Kawasaki M. High mobility thin film transistors with transparent ZnO channels. Jpn. J. Appl. Phys. 42 (2003) L347-L349
3. Masuda S., Kitamura K., Okumura Y., Miyatake S., Tabata H., and Kawai T. Transparent thin film transistors using ZnO as an active channel layer and their electrical properties. J. Appl. Phys. 93 (2003) 1624-1630
4. Hoffman R.L., Norris B.J., and Wager J.F. ZnO-based transparent thin-film transistors. Appl. Phys. Lett. 82 (2003) 733-735
5. Bae H.S., Im S., and Song J.H. Device isolation of ultraviolet-detecting ZnO-based transistors using energetic B ions. J. Electrochem. Soc. 153 (2006) G791-G794
6. Bae H.S., Yoon M.H., Kim J.H., and Im S. Photodetecting properties of ZnO-based thin-film transistors. Appl. Phys. Lett. 83 (2003) 5313-5315
7. Lee K., Kim J.H., and Im S. Probing the work function of a gate metal with a top-gate ZnO-thin-film transistor with a polymer dielectric. Appl. Phys. Lett. 88 (2006) 023504-1-023504-3
8. Hwang D.K., Park J.H., Lee J., Choi J.M., Kim J.H., Kim E., and Im S. Improving resistance to gate bias stress in pentacene TFTs with optimally cured polymer dielectric layers. J. Electrochem. Soc. 153 (2006) G23-G26
9. x electrodes. Appl. Phys. Lett. 86 (2005) 123505-1-123505-3
10. Im S., Jin B.J., and Yi S. Ultraviolet emission and microstructural evolution in pulsed-laser-deposited ZnO films. J. Appl. Phys. 87 (2000) 4558-4561
11. Bethke S., Han H., and Wessels B.W. Luminescence of heteroepitaxial zinc oxide. Appl. Phys. Lett. 52 (1988) 138-140
12. Kasap S.O. Optoelectronics and Photonics (2001), Prentice Hall, Jew Jersey pp. 224-225
13. Razeghi M., and Rogalski A. Semiconductor ultraviolet detectors. J. Appl. Phys. 79 (1996) 7433-7473
14. Kang S., and Leblebici Y. CMOS Digital Integrated Circuits. 3rd ed. (2003), Mcgraw-Hill, New York pp. 177-186
15. Sundaram K.B., and Ashaman Khan. Work function determination of zinc oxide films. J. Vac. Sci. Technol. A 15 (1997) 428-430
16. Bube R.H. Photoconductivity of Solids (1967), John Wiley & Sons, New York pp. 68-74