Properties of Pt/SrBi2Ta2O9/BL/Si MFIS structures containing HfO2, SiO2, and Si3N 4 buffer layers

Electrochemical and Solid-State Letters

Volumn 10, Issue 5, 2007, Pages 25-28

  Leu, Ching Chich ^a,b,f   Leu, Chia Feng ^c   Chien, Chao Hsin ^d   Yang, Ming Jui ^e   Huang, Rui Hao ^e   Lin, Chen Han ^c   Hsu, Fan Yi ^c  

^a NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^e NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^f ELECTROCHEMICAL SOCIETY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC MEMORY APPLICATIONS; MEMORY RATIO;

ELECTRIC PROPERTIES; FERROELECTRIC DEVICES; PLATINUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES;

BUFFER LAYERS;

EID: 33947306738     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2710176     Document Type: Article

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