SCOPUS 정보 검색 플랫폼

Materials Science and Engineering: B

Volumn 161, Issue 1-3, 2009, Pages 130-133

Effect of Ba and Zr doping in Sr0.8Bi2.2Ta2O9 thin films

(4) Bozgeyik, Mehmet S a,c Cross, J S a,b Ishiwara, H a Shinozaki, K a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b FUJITSU LABORATORIES LTD (Japan)

c KAHRAMANMARAS SUTCU IMAM UNIVERSITY (Turkey)

Author keywords

Barium; Electrical measurements; Layered structures; SBT; Thin films; Zirconium

Indexed keywords

BARIUM; BARIUM COMPOUNDS; BISMUTH COMPOUNDS; ELECTRIC FIELDS; FERROELECTRIC FILMS; FERROELECTRICITY; SEMICONDUCTOR DOPING; STRONTIUM; STRONTIUM COMPOUNDS; TANTALUM; TANTALUM COMPOUNDS; ZIRCONIUM;

BA DOPING; ELECTRICAL MEASUREMENT; FERROELECTRIC PARAMETERS; ION-DOPING; LAYERED STRUCTURES; SBT; SBT THIN FILM; SI(1 0 0); THIN-FILMS; ZR-DOPING;

THIN FILMS;

EID: 67349188809 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2009.01.010 Document Type: Article

Times cited : (8)

References (14)

1
- 85165801089
- M.S. Bozgeyik, J.S. Cross, H. Ishiwara, K. Shinozaki, in: O. Auciello, D. Wouters, S. Soss, S. Hong (eds.), Materials Science and Technology for Nonvolatile Memories, Mater. Res. Soc. Symp. Proc., 1071, Warrendale, PA, 2008, 1071-F03-09.
- M.S. Bozgeyik, J.S. Cross, H. Ishiwara, K. Shinozaki, in: O. Auciello, D. Wouters, S. Soss, S. Hong (eds.), Materials Science and Technology for Nonvolatile Memories, Mater. Res. Soc. Symp. Proc., vol. 1071, Warrendale, PA, 2008, 1071-F03-09.

2
- 85165821475
- M.S. Bozgeyik, J.S. Cross, H. Ishiwara, K. Shinozaki, Jpn. J. Appl. Phys, under review for publication
- M.S. Bozgeyik, J.S. Cross, H. Ishiwara, K. Shinozaki, Jpn. J. Appl. Phys., under review for publication.

3
- 13544249619
- Cai M.Q., Yin Z., and Zhang M.S. Solid State Commun. 133 (2005) 663
- (2005) Solid State Commun. , vol.133 , pp. 663
- Cai, M.Q.¹ Yin, Z.² Zhang, M.S.³

4
- 0001670131
- Shimakawa Y., Kubo Y., Nakagawa, Goto S., Kamiyama T., Asano H., and Izumi F. Phys. Rev. B 61 (2000) 6559
- (2000) Phys. Rev. B , vol.61 , pp. 6559
- Shimakawa, Y.¹ Kubo, Y.² Nakagawa³ Goto, S.⁴ Kamiyama, T.⁵ Asano, H.⁶ Izumi, F.⁷

5
- 0001334041
- Shimakawa Y., Kubo Y., Tauchi Y., Kamiyama T., Asano H., and Izumi F. Appl. Phys. Lett. 77 (2000) 2749
- (2000) Appl. Phys. Lett. , vol.77 , pp. 2749
- Shimakawa, Y.¹ Kubo, Y.² Tauchi, Y.³ Kamiyama, T.⁴ Asano, H.⁵ Izumi, F.⁶

6
- 33744920068
- Goel P., and Yadav K.L. Physica B 382 (2006) 245
- (2006) Physica B , vol.382 , pp. 245
- Goel, P.¹ Yadav, K.L.²

7
- 0035886068
- Irie H., Miyayama M., and Kudo T. J. Appl. Phys. 90 (2001) 4089
- (2001) J. Appl. Phys. , vol.90 , pp. 4089
- Irie, H.¹ Miyayama, M.² Kudo, T.³

8
- 0011849874
- Kumar M.M., and Ye: Z.-G. J. Appl. Phys. 90 (2001) 934
- (2001) J. Appl. Phys. , vol.90 , pp. 934
- Kumar, M.M.¹ Ye, Z.-G.²

9
- 0035454991
- Noguchi Y., Shimizu H., Myama M., Okinawa K., and Kamiya T. Jpn. J. Appl. Phys. 40 (2001) 5812
- (2001) Jpn. J. Appl. Phys. , vol.40 , pp. 5812
- Noguchi, Y.¹ Shimizu, H.² Myama, M.³ Okinawa, K.⁴ Kamiya, T.⁵

10
- 0035522036
- Suarez D.Y., Reaney I.M., and Lee W.E. J. Mater. Res. 16 (2001) 3139
- (2001) J. Mater. Res. , vol.16 , pp. 3139
- Suarez, D.Y.¹ Reaney, I.M.² Lee, W.E.³

11
- 0029733104
- Kim S.K., Miyayama M., and Yanagida H. Mater. Res. Bull. 31 (1996) 121
- (1996) Mater. Res. Bull. , vol.31 , pp. 121
- Kim, S.K.¹ Miyayama, M.² Yanagida, H.³

12
- 0000006085
- Stachiotti M., Rodriguez C., Draxl C.A., and Christensen N. Phys. Rev. B 61 (2000) 14434
- (2000) Phys. Rev. B , vol.61 , pp. 14434
- Stachiotti, M.¹ Rodriguez, C.² Draxl, C.A.³ Christensen, N.⁴

13
- 0032607406
- Shimakawa Y., Kudo Y., Nakagawa Y., Kamiyama T., Asano H., and Izumi F. Appl. Phys. Lett. 74 (1999) 1904
- (1999) Appl. Phys. Lett. , vol.74 , pp. 1904
- Shimakawa, Y.¹ Kudo, Y.² Nakagawa, Y.³ Kamiyama, T.⁴ Asano, H.⁵ Izumi, F.⁶

14
- 0034906387
- Noguchi Y., Miyayama M., and Kudo T. Phys. Rev. B 63 (2001) 214102
- (2001) Phys. Rev. B , vol.63 , pp. 214102
- Noguchi, Y.¹ Miyayama, M.² Kudo, T.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.