Ferroelectric and electrical properties of BaZrO3 doped Sr0.8Bi2.2Ta2O9 thin films

Materials Research Society Symposium Proceedings

Volumn 1071, Issue , 2008, Pages 207-212

  Mehmet, Bozgeyik ^a,b   Cross, J S ^c   Ishiwara, H ^a   Shinozaki, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b KAHRAMANMARAS SUTCU IMAM UNIVERSITY   (Turkey)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

BaZrO3; FeFET; Ferroelectric Properties; SBT; Sr0.8Bi2.2Ta 2O9; Thin Film

Indexed keywords

COLLOIDS; ELECTRIC FIELDS; ELECTRIC PROPERTIES; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; GELATION; GROWTH (MATERIALS); HYSTERESIS; HYSTERESIS LOOPS; LEAKAGE CURRENTS; MAGNETIC MATERIALS; MATERIALS; MATERIALS SCIENCE; OXYGEN; PLATINUM; POLARIZATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SOLIDS; SPIN COATING; TANTALUM; THICK FILMS; THIN FILMS;

BAZRO3; FEFET; FERROELECTRIC PROPERTIES; SBT; SR0.8BI2.2TA 2O9;

FERROELECTRIC FILMS;

EID: 55949092700     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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