Ferroelectric properties of BaZrO3 doped Sr0.8Bi 2.2Ta2O9 thin films

Japanese Journal of Applied Physics

Volumn 48, Issue 6, 2009, Pages

  Bozgeyik, Mehmet S ^b   Crossy, Jeffrey S ^a   Ishiwara, Hiroshi ^a   Shinozaki, Kazuo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b KAHRAMANMARAS SUTCU IMAM UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; CHARACTERISTIC PEAKS; DIELECTRIC CONSTANTS; ELECTRICAL PROPERTY; FERROELECTRIC GATE; FERROELECTRIC PROPERTY; GENERAL TRENDS; GRAIN SIZE; LAYERED PEROVSKITE STRUCTURE; LEAKAGE CURRENT MEASUREMENTS; LEAKAGE MECHANISM; LOW DIELECTRIC CONSTANTS; LOW LEAKAGE; MOLAR RATIO; ORDER OF MAGNITUDE; PEAK BROADENING; PT ELECTRODE; REMANENT POLARIZATION; SEM; X RAY PHOTOELECTRON SPECTRA;

CERAMIC CAPACITORS; DIELECTRIC WAVEGUIDES; DOPING (ADDITIVES); ELECTRIC CURRENT MEASUREMENT; ELECTRIC POTENTIAL; FERROELECTRIC DEVICES; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; GELATION; HYSTERESIS; HYSTERESIS LOOPS; OXIDE MINERALS; PERMITTIVITY; PEROVSKITE; PHOTOELECTRON SPECTROSCOPY; PHOTOGRAPHY; PLATINUM; SCANNING ELECTRON MICROSCOPY; TANTALUM; THIN FILMS; THREE DIMENSIONAL; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

FERROELECTRIC FILMS;

EID: 68649110101     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.061403     Document Type: Article

References (39)

1. E. Tokumitsu, K. Okamoto, and H. Ishiwara: Jpn. J. Appl. Phys. 40 (2001) 2917.
2. S.-K. Kang and H. Ishiwara: Jpn. J. Appl. Phys. 41 (2002) 2094.
3. J. F. Scott and C. A. P. Araujo: Science 246 (1989) 1400.
4. T. Mihara, H. Yoshimori, T. Watanabe, and C. A. P. Araujo: Jpn. J. Appl. Phys. 34 (1995) 5233.
5. C. A.-P. de Araujo, J. D. Cuchiaro, L. D. Mcmillan, M. C. Scott, and J. F. Scott: Nature 374 (1995) 627.
6. E. C. Subbarao: J. Phys. Chem. Solids 23 (1962) 665.
7. Y. Noguchi, M. Miyayama, K. Oikawa, T. Kamiyama, M. Osada, and M. Kakihana: Jpn. J. Appl. Phys. 41 (2002) 7062.
8. H. Watanabe, T. Mihara, H. Yoshimori, and C. A. P. de Araujo: Jpn. J. Appl. Phys. 34 (1995) 5240.
9. T. Noguchi, T. Hase, and Y. Miyasaka: Jpn. J. Appl. Phys. 35 (1996) 4900.
10. T. Atsuki, N. Soyama, T. Yonezawa, and K. Ogi: Jpn. J. Appl. Phys. 34 (1995) 5096.
11. Y. Noguchi, H. Shimizu, M. Miyayama, K. Okinawa, and T. Kamiyama: Jpn. J. Appl. Phys. 40 (2001) 5812.
12. R. R. Das, P. Bhattacharya, W. Perez, and R. S. Katiyar: Appl. Phys. Lett. 80 (2002) 637.
13. I. Levin, T. G. Amos, S. M. Bell, L. Farber, T. A. Vanderah, R. S. Roth, and B. H. Toby: J. Solid State Chem. 175 (2003) 170.
14. T. Maiti, R. Guo, and A. S. Bhalla: J. Appl. Phys. 100 (2006) 114109.
15. C.-L. Hung, Y.-L. Chueh, T.-B. Wu, and L.-J. Chou: J. Appl. Phys. 97 (2005) 034105.
16. J. W. Bennett, I. Grinberg, and A. M. Rappe: Phys. Rev. B 73 (2006) 180102(R).
17. M. S. Bozgeyik, J. S. Cross, H. Ishiwara, and K. Shinozaki: Mater. Sci. Eng. B 161 (2009) 130.
18. H.-Y. Chou, T.-M. Chen, and T.-Y. Tseng: Mater. Chem. Phys. 82 (2003) 826.
19. A.-D. Li, D. Wu, H.-Q. Ling, T. Yu, Z.-G. Liu, and N.-B. Ming: Microelectron. Eng. 66 (2003) 654.
20. N. J. Seong, C. Yang, W. C. Shin, and S. G. Yoon: Appl. Phys. Lett. 72 (1998) 1374.
21. S. H. Kim, D. J. Kim, J.-P. Maria, A. I. Kingon, S. K. Streiffer, J. Im, O. Auciello, and A. R. Krauss: Appl. Phys. Lett. 76 (2000) 496.
22. Handbook of Chemistry and Physics, ed. R. C. Weast (CRC Press, Boca Raton, FL, 1978).
23. J. D. Baniecki, M. Ishii, T. Shioga, K. Kurihara, and S. Miyahara: Appl. Phys. Lett. 89 (2006) 162908.
24. N. Gunasekaran, S. Rajadurai, J. J. Carberry, N. Bakshi, and C. B. Alcock: Solid State Ionics 81 (1995) 243.
25. D. Y. Suarez, I. M. Reaney, and W. E. Lee: J. Mater. Res. 16 (2001) 3139.
26. F. Jona and G. Shirane: Ferroelectric Crystals (Pergamon Press, New York, 1962).
27. M. Q. Cai, Z. Yin, and M. S. Zhang: Solid State Commun. 133 (2005) 663.
28. Y. Shimakawa, Y. Kubo, Nakagawa, S. Goto, T. Kamiyama, H. Asano, and F. Izumi: Phys. Rev. B 61 (2000) 6559.
29. Y. Shimakawa, Y. Kubo, Y. Tauchi, T. Kamiyama, H. Asano, and F. Izumi: Appl. Phys. Lett. 77 (2000) 2749.
30. P. Goel and K. L. Yadav: Physica B 382 (2006) 245.
31. H. Irie, M. Miyayama, and T. Kudo: J. Appl. Phys. 90 (2001) 4089.
32. M. M. Kumar and Z.-G. Ye: J. Appl. Phys. 90 (2001) 934.
33. S. B. Ren, C. J. Lu, J. S. Liu, H. M. Shen, and Y. N. Wang: Phys. Rev. B 54 (1996) R14337.
34. S. B. Ren, C. J. Lu, J. S. Liu, H. M. Shen, and Y. N. Wang: Phys. Rev. B 55 (1997) 3485.
35. S. Chattopadhyay, P. Ayyub, V. R. Palkar, and M. Multani: Phys. Rev. B 52 (1995) 13177.
36. G. Arlt, D. Hennings, and G. De With: J. Appl. Phys. 58 (1985) 1619.
37. R. R. Das, P. Bhattacharya, W. Perez, and R. S. Katiyar: Jpn. J. Appl. Phys. 42 (2003) 162.
38. J. F. Scott, B. M. Melnick, J. D. Cuchiaro, R. Zuleeg, C. A. Paz de Araujo, L. D. McMillan, and M. C. Scott: Integrated Ferroelectr. 4 (1994) 85.
39. H. D. Chen, K. R. Udayakumar, K. K. Li, C. J. Gaskey, and L. E. Cross: Integrated Ferroelectr. 15 (1997) 89.