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Volumn 47, Issue 4 PART 2, 2008, Pages 3067-3069

Vanadium dioxide films deposited on amorphous SiO2- And Al 2O3-coated Si substrates by reactive RF-magnetron sputter deposition

Author keywords

Al2O3; Metal insulator transition; RF magnetron sputter deposition; SiO2; Vanadium dioxide

Indexed keywords

ALUMINUM; AMORPHOUS SILICON; ANNEALING; ATOMIC LAYER DEPOSITION; DEPOSITION; ELECTRIC RESISTANCE; MAGNETRONS; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; PLASMA DEPOSITION; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON; SILICON COMPOUNDS; SILICON WAFERS; SPUTTER DEPOSITION; TRANSITION METALS; VANADIUM; VANADIUM ALLOYS;

EID: 54249146064     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.3067     Document Type: Article
Times cited : (23)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.