Vanadium dioxide films deposited on amorphous SiO2- And Al 2O3-coated Si substrates by reactive RF-magnetron sputter deposition

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 3067-3069

  Yun, Sun Jin ^a   Lim, Jung Wook ^a   Noh, Jong Su ^a   Chae, Byung Gyu ^a   Kim, Hyun Tak ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Al2O3; Metal insulator transition; RF magnetron sputter deposition; SiO2; Vanadium dioxide

Indexed keywords

ALUMINUM; AMORPHOUS SILICON; ANNEALING; ATOMIC LAYER DEPOSITION; DEPOSITION; ELECTRIC RESISTANCE; MAGNETRONS; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; PLASMA DEPOSITION; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON; SILICON COMPOUNDS; SILICON WAFERS; SPUTTER DEPOSITION; TRANSITION METALS; VANADIUM; VANADIUM ALLOYS;

AL2O3; AMORPHOUS; ATOMIC LAYERS; CHAMBER PRESSURES; INDUCED RESISTANCES; MAGNETRON SPUTTER DEPOSITIONS; METAL TARGETS; OPERATING PRESSURES; POSTDEPOSITION ANNEALING; RESISTANCE CHANGES; RF-MAGNETRON SPUTTER DEPOSITION; SI SUBSTRATES; SI WAFERS; SIO2; TEMPERATURE PLASMAS; UNDERLAYER; VANADIUM DIOXIDE; VANADIUM DIOXIDE FILMS;

AMORPHOUS FILMS;

EID: 54249146064     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.3067     Document Type: Article

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