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Volumn 47, Issue 4 PART 2, 2008, Pages 3067-3069
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Vanadium dioxide films deposited on amorphous SiO2- And Al 2O3-coated Si substrates by reactive RF-magnetron sputter deposition
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Author keywords
Al2O3; Metal insulator transition; RF magnetron sputter deposition; SiO2; Vanadium dioxide
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Indexed keywords
ALUMINUM;
AMORPHOUS SILICON;
ANNEALING;
ATOMIC LAYER DEPOSITION;
DEPOSITION;
ELECTRIC RESISTANCE;
MAGNETRONS;
METAL INSULATOR BOUNDARIES;
METAL INSULATOR TRANSITION;
PLASMA DEPOSITION;
PULSED LASER DEPOSITION;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR INSULATOR BOUNDARIES;
SILICON;
SILICON COMPOUNDS;
SILICON WAFERS;
SPUTTER DEPOSITION;
TRANSITION METALS;
VANADIUM;
VANADIUM ALLOYS;
AL2O3;
AMORPHOUS;
ATOMIC LAYERS;
CHAMBER PRESSURES;
INDUCED RESISTANCES;
MAGNETRON SPUTTER DEPOSITIONS;
METAL TARGETS;
OPERATING PRESSURES;
POSTDEPOSITION ANNEALING;
RESISTANCE CHANGES;
RF-MAGNETRON SPUTTER DEPOSITION;
SI SUBSTRATES;
SI WAFERS;
SIO2;
TEMPERATURE PLASMAS;
UNDERLAYER;
VANADIUM DIOXIDE;
VANADIUM DIOXIDE FILMS;
AMORPHOUS FILMS;
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EID: 54249146064
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.47.3067 Document Type: Article |
Times cited : (23)
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References (12)
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