Unipolar SiC power devices and elevated temperature

Microelectronic Engineering

Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 181-184

  Friedrichs, Peter ^a   Stephani, Dietrich ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE APPLICATIONS; JUNCTION GATE FIELD EFFECT TRANSISTORS; MOSFET DEVICES; PERFORMANCE; SILICON CARBIDE;

OXIDE INTERFACES; POWER DEVICES; SWITCHING DEVICES;

SEMICONDUCTOR DEVICES;

EID: 30344473925     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.10.049     Document Type: Conference Paper

References (6)

1. Available from: 〈http://www.ssec.honeywell.com/hightemp/tech_paper.html〉.
2. Available from: 〈http://www.toyota.com/prius/〉.
3. Available from: 〈http://www.cree.com/Products/pwr_specs.asp〉.
4. M.K. Das Recent advances in (0001) 4H-SiC MOS device technology Material Science Forum 457-460 2004 1275 1280
5. S. Krishnaswami et al., Presented at International Reliability Physics Symposium, San Jose, CA, USA, April 2005.
6. P. Friedrichs, Charge controlled silicon carbide switching devices, in: MRS Proceedings vol. 815, presented at the MRS Spring Meeting 2004.