High temperature characterization of SiC BJTs for power switching applications

Solid-State Electronics

Volumn 50, Issue 6, 2006, Pages 1073-1079

  Sheng, K ^a   Yu, L C ^a   Zhang, J ^a   Zhao, J H ^a  

^a RUTGERS UNIVERSITY   (United States)

Author keywords

BJT; High speed; High temperature; SiC

Indexed keywords

ELECTRIC CURRENT DISTRIBUTION; ELECTRIC RESISTANCE; HIGH TEMPERATURE APPLICATIONS; JUNCTION GATE FIELD EFFECT TRANSISTORS; POWER ELECTRONICS; SEMICONDUCTOR MATERIALS; SWITCHING SYSTEMS;

BJT; HIGH SPEED; POWER SWITCHING APPLICATIONS; SIC;

SILICON CARBIDE;

EID: 33745756980     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.05.004     Document Type: Article

References (11)

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