Effects of Cu and Pd addition on Au bonding wire/Al pad interfacial reactions and bond reliability

Journal of Electronic Materials

Volumn 35, Issue 11, 2006, Pages 2048-2055

  Gam, Sang Ah ^a   Kim, Hyoung Joon ^a   Cho, Jong Soo ^b   Park, Yong Jin ^b   Moon, Jeong Tak ^b   Paik, Kyung Wook ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b MK Electron Co Ltd   (South Korea)

Author keywords

Au bonding wire; Cu; Cu rich layer; Intermetallic compound; Pd; Pd rich layer

Indexed keywords

AU BONDING WIRE; WIRE BONDING TECHNOLOGY; WIRE SWEEPING PROBLEMS;

ALLOYING ELEMENTS; ELECTRIC WIRE; INTERFACES (MATERIALS); INTERMETALLICS; PALLADIUM COMPOUNDS; PROBLEM SOLVING;

COPPER COMPOUNDS;

EID: 33845754884     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0312-9     Document Type: Conference Paper

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