Raman studies of Ge-promoted stress modulation in 3C-SiC grown on Si(111)

Applied Physics Letters

Volumn 87, Issue 4, 2005, Pages

  Zgheib, Ch ^a,b   McNeil, L E ^c   Kazan, M ^a   Masri, P ^a   Morales, F M ^b   Ambacher, O ^b   Pezoldt, J ^b  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^c University of North Carolina at Chapel Hill   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER SATURATION; SOLID-SOURCE MOLECULAR-BEAM EPITAXY (SSMBE); TRANSITION METAL SILICIDES; WAFER CURVATURE MEASUREMENT;

COMPUTER SIMULATION; FIELD EFFECT TRANSISTORS; GERMANIUM COMPOUNDS; MICROELECTROMECHANICAL DEVICES; MOLECULAR BEAM EPITAXY; RAMAN SCATTERING; RESIDUAL STRESSES; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

SILICON COMPOUNDS;

EID: 23644459322     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1999858     Document Type: Article

References (17)

1. E. Hurtós and J. Rodríguez-Viejo, J. Appl. Phys. 87, 1748 (2000).
2. T. Nishiguchi, M. Nakamura, K. Nishio, T. Ishiki, and S. Nishino, Appl. Phys. Lett. 84, 3082 (2004).
3. J. Camassel, J. Vac. Sci. Technol. B 16, 3 (1998).
4. J. Pezoldt, B. Schröter, V. Cimalla, and P. Masri, Phys. Status Solidi A 185, 159 (2001).
5. J. Pezoldt, Ch. Förster, P. Weih, and P. Masri, Appl. Surf. Sci. 184, 79 (2001).
6. W. L. Sarney, M. C. Wood, L. Salamanca-Riba, P. Zhou, and M. Spencer; J. Appl. Phys. 91, 668 (2002).
7. L. A. Falkovsky, J.-M. Bluet, and J. Camassel, Phys. Rev. B 57, 11283 (1998).
8. S. Rohmfeld, M. Hundhausen, and L. Ley, Phys. Rev. B 58, 9858 (1998).
9. S. Rohmfeld, M. Hundhausen, L. Ley, Ch. A. Zorman, and M. Mehregany; J. Appl. Phys. 91, 1113 (2002).
10. P. Weih, V. Cimalla, Ch. Förster, J. Pezoldt, Th. Stauden, L. Spiess, H. Romanus, M. Hermann, M. Eikhoff, P. Masri, and O. Ambacher, Mater. Sci. Forum 433-436, 233 (2003).
11. P. Masri, N. Moreaud, M. Rouhani Laridjani, J. Calas, M. Averous, G. Chaix, A. Dollet, R. Berjoan, and C. Dupuy, Mater. Sci. Eng., B 61-62, 535 (1999).
12. P. Masri, Phys. Rev. B 52, 16627 (1995).
13. J. Pezoldt, P. Masri, M. Rouhani Laridjani, M. Averous, T. Wöhner, J. A. Schaefer, Th. Stauden, G. Ecke, R. Pieterwas, and L. Spiess, Mater. Sci. Forum 338-342, 289 (2000).
14. J. Pezoldt, Ch. Zgheib, P. Masri, M. Averous, F. M. Morales, R. Kosiba, G. Ecke, P. Weih, and O. Ambacher, Surf. Interface Anal. 36, 969 (2004).
15. F. M. Morales, Ch. Zgheib, S. I. Molina, D. Araújo, R. García, C. Fernández, A. Sanz-Hervás, P. Masri, P. Weih, Th. Stauden, O. Ambacher, and J. Pezoldt, Mater. Sci. Forum 457-460, 297 (2004).
16. J. Pezoldt, Ch. Zgheib, F. M. Morales, Ch. Förster, Th. Stauden, Ch. Wang, P. Masri, A. Leycuras, G. Ferro, and O. Ambacher, Proceedings of the 15th European Conference on Chemical Vapor Deposition. (accepted for publication).
17. F. M. Morales, P. Weih, Th. Stauden, O. Ambacher, and J. Pezoldt, Microscopy of Semiconducting Marterials 2005., Inst. Phys. Conf. Ser. (submitted).