Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) oriented substrates

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 785-788

  Naik, H ^a   Tang, K ^a   Marron, T ^a   Chow, T P ^a   Fronheiser, J ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b GE GLOBAL RESEARCH   (United States)

Author keywords

(000 1) SiC substrate; (11 20) SiC substrate; 4H SiC MOSFETs; Inversion layer mobility

Indexed keywords

CARRIER CONCENTRATION; HALL MOBILITY; MOSFET DEVICES; SILICON CARBIDE; THRESHOLD VOLTAGE;

4H-SIC MOSFETS; DEVICE PARAMETERS; FIELD-EFFECT MOBILITIES; GATE OXIDE PROCESS; SHEET CARRIER CONCENTRATION; SIC SUBSTRATES; SUBTHRESHOLD SLOPE; TEMPERATURE CHARACTERIZATION;

SUBSTRATES;

EID: 70349651686     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.785     Document Type: Conference Paper

References (10)

1. Y. Wang, K. Tang et al.: IEEE Trans. Electron Dev. Vol. 55 (2008), p. 2046 doi:10.1109/TED.2008.926674.
2. G. Y. Chung, C. C. Tin, J. R. Williams et al.: Appl. Phys. Lett. Vol. 76 (2000), p. 1713 doi:10.1063/1.126167.
3. G. Gudjónsson et al.: Mat. Sci. Forum Vols. 457-460 (2004), p. 1425 doi:10.4028/www.scientific.net/MSF.457-460.1425.
4. H. Yano, T. Hirao et al.: IEEE Electron Device Lett. Vol. 20 (1999), p. 611 doi:10.1109/55.806101. (Pubitemid 30531496)
5. J. Senzaki, K. Kojima et al.: IEEE Electron Device Lett. Vol. 23 (2002), p. 13 doi:10.1109/55.974797. (Pubitemid 34140620)
6. M. Okamoto, S. Suzuki, M. Kato et al.: IEEE Electron Device Lett. Vol. 25 (2004), p. 405 doi:10.1109/LED.2004.828970.
7. K V Vassilevski et al: Semicond. Sci. Technol. Vol. 20 (2005), p. 271 doi:10.1088/0268-1242/20/3/003. (Pubitemid 40347134)
8. S. T. Sheppard, J. A. Cooper, and M. A. Melloch: J. Appl. Phys. Vol. 75 (1994), p. 3205 doi:10.1063/1.357017.
9. G. Ghibaudo: Electron. Lett. Vol. 24 (1988), p. 543 doi:10.1049/el: 19880369.
10. A. G. Sabnis and J. T. Clemens: IEDM Tech. Dig (1979), p. 18.