Interface properties of 4H-SiC/SiO2 with MOS capacitors and FETs annealed in O2, N2O, NO and CO2

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1309-1312

  Wang, W ^a   Banerjee, S ^a   Chow, T P ^a   Gutmann, R J ^a   Issacs Smith, T ^b   Williams, J ^b   Jones, K A ^c   Lelis, A ^c   Tipton, W ^c   Scozzie, S ^c   Agarwal, A ^d  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b AUBURN UNIVERSITY   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

^d Arkansas Power Electronics International Inc   (United States)

Author keywords

4H SiC; Anneal; Field effect mobility; Hall measurements; Interface traps

Indexed keywords

ANNEALING; CARRIER MOBILITY; HALL EFFECT; MOS DEVICES; OXIDATION; SILICA; THICKNESS MEASUREMENT;

4H SIC; FIELD EFFECT MOBILITY; HALL MEASUREMENTS; INTERFACE TRAPS;

SILICON CARBIDE;

EID: 8744268535     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (6)

1. S. Dimitrijev, H. F. Li, D. Sweatman and H. B. Harrison, IEEE Electron Device Letters, Vol. 18 (5) (1997), p.175
2. G.Y. Chung, C.C. Tin, J.R. Williams, J.K. McDonald, M.Di Ventra, S.R. Pantelides, L.C. Feldman, and R.A. Weller, Appl. Phys. Lett. Vol. 76 (2000), p. 1713
3. L.A. Lipkin, M.K. Das and J.W. Palmour, Mater. Sci. Forum Vol. 389-393 (2002), p. 985
4. W. Wang, S. Banerjee, T. P. Chow, and R. J. Gutmann, submitted to ICSCRM 2003
5. E.H. Nicollian and J.R. Brews, MOS physics and technology, Wiley Interscience (1982)
6. E. Bano, T. Ouisse, L.Di Cioccio and S. Karmann, Appl. Phys. Lett., Vol. 65 (1994), p. 2723