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Volumn 16, Issue 25, 2008, Pages 20809-20816

Low propagation loss SiN optical waveguide prepared by optimal low-hydrogen module

Author keywords

[No Author keywords available]

Indexed keywords

FILM PREPARATION; HYDROGEN; TEMPERATURE; WAVEGUIDES;

EID: 57349190232     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.16.020809     Document Type: Article
Times cited : (124)

References (18)
  • 1
    • 0032024519 scopus 로고    scopus 로고
    • Making silicon nitride film a viable gate dielectric
    • T. P. Ma, "Making silicon nitride film a viable gate dielectric," IEEE. Trans. Electron. Devices 45, 680-690 (1998).
    • (1998) IEEE. Trans. Electron. Devices , vol.45 , pp. 680-690
    • Ma, T.P.1
  • 2
    • 0141918511 scopus 로고    scopus 로고
    • Potentially low-cost widely tunable laser consisting of a semiconductor optical amplifier connected directly to a silica waveguide grating router
    • C. R. Doerr, L. W. Stulz, R. Pafchek, K. Dreyer, and L. Zhang, "Potentially low-cost widely tunable laser consisting of a semiconductor optical amplifier connected directly to a silica waveguide grating router," IEEE. Photon. Technol. Lett. 15, 1446-1448 (2003).
    • (2003) IEEE. Photon. Technol. Lett , vol.15 , pp. 1446-1448
    • Doerr, C.R.1    Stulz, L.W.2    Pafchek, R.3    Dreyer, K.4    Zhang, L.5
  • 4
    • 0034225426 scopus 로고    scopus 로고
    • Advances in low temperature processing of silicon nitride based dielectrics and their applications in surface passivation and integrated optical devices
    • O. P. Agnihotri, S. C. Jain, J. Poortmans, J. Szlufcik, G. Beaucarne, J. Nijs, and R. Mertens, "Advances in low temperature processing of silicon nitride based dielectrics and their applications in surface passivation and integrated optical devices," Semicond. Sci. Technol. 15, 29-40 (2000).
    • (2000) Semicond. Sci. Technol , vol.15 , pp. 29-40
    • Agnihotri, O.P.1    Jain, S.C.2    Poortmans, J.3    Szlufcik, J.4    Beaucarne, G.5    Nijs, J.6    Mertens, R.7
  • 6
    • 2442517663 scopus 로고    scopus 로고
    • Comparative investigation of hydrogen bonding in silicon based PECVD grown dielectrics for optical waveguides
    • F. Ay and A. Aydinli, "Comparative investigation of hydrogen bonding in silicon based PECVD grown dielectrics for optical waveguides," Opt. Mater. 26, 33-46 (2004).
    • (2004) Opt. Mater , vol.26 , pp. 33-46
    • Ay, F.1    Aydinli, A.2
  • 8
    • 0034155940 scopus 로고    scopus 로고
    • A comparative study on inductively-coupled plasma high-density plasma, plasma-enhanced, and low pressure chemical vapor deposition silicon nitride films
    • J. Yota, J. Hander, and A. A. Saleh, "A comparative study on inductively-coupled plasma high-density plasma, plasma-enhanced, and low pressure chemical vapor deposition silicon nitride films," J. Vac. Sci. Technol. A 18, 372-6 (2000).
    • (2000) J. Vac. Sci. Technol. A , vol.18 , pp. 372-376
    • Yota, J.1    Hander, J.2    Saleh, A.A.3
  • 10
    • 2942564252 scopus 로고    scopus 로고
    • Growth and properties of silicon nitride films prepared by low pressure chemical vapor deposition using trichlorosilane and ammonia
    • X. J. Liu, J. J. Zhang, X. W. Sun, Y. B. Pan, L. P. Huang, and C. Y. Jin, "Growth and properties of silicon nitride films prepared by low pressure chemical vapor deposition using trichlorosilane and ammonia," Thin Solid Films 460, 72-77 (2004).
    • (2004) Thin Solid Films , vol.460 , pp. 72-77
    • Liu, X.J.1    Zhang, J.J.2    Sun, X.W.3    Pan, Y.B.4    Huang, L.P.5    Jin, C.Y.6
  • 12
    • 0034904807 scopus 로고    scopus 로고
    • F. L. Martinez, A. del Prado, I. Martil, G. Gonzalez-Diaz, W. Bohne, W. Fuhs, J. Rohrich, B. Selle, and I. Sieber, Molecular models and activation energies for bonding rearrangement in plasma-deposited a-SiNx:H dielectric thin films treated by rapid thermal annealing, Phys. Rev. B (Condensed Matter and Materials Physics) 63, 245320-1 (2001).
    • F. L. Martinez, A. del Prado, I. Martil, G. Gonzalez-Diaz, W. Bohne, W. Fuhs, J. Rohrich, B. Selle, and I. Sieber, "Molecular models and activation energies for bonding rearrangement in plasma-deposited a-SiNx:H dielectric thin films treated by rapid thermal annealing," Phys. Rev. B (Condensed Matter and Materials Physics) 63, 245320-1 (2001).
  • 13
    • 0035442524 scopus 로고    scopus 로고
    • Dissociation reactions of hydrogen in remote plasma-enhanced chemical-vapor-deposition silicon nitride
    • C. Boehme and G. Lucovsky," Dissociation reactions of hydrogen in remote plasma-enhanced chemical-vapor-deposition silicon nitride " J. Vac. Sci. Technol. A 19, 2622-2627 (2001).
    • (2001) J. Vac. Sci. Technol. A , vol.19 , pp. 2622-2627
    • Boehme, C.1    Lucovsky, G.2
  • 14
    • 0017959228 scopus 로고
    • The hydrogen, content of plasma-deposited silicon nitride
    • W. A. Lanford and M. J. Rand, "The hydrogen, content of plasma-deposited silicon nitride," J. Appl. Phys. 49, 2473-2477 (1978).
    • (1978) J. Appl. Phys , vol.49 , pp. 2473-2477
    • Lanford, W.A.1    Rand, M.J.2
  • 16
    • 2142838463 scopus 로고    scopus 로고
    • Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics
    • H. T. Philipp, K. N. Andersen, W. Svendsen, and H. Ou, "Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics," Electron. Lett. 40, 419-421 (2004).
    • (2004) Electron. Lett , vol.40 , pp. 419-421
    • Philipp, H.T.1    Andersen, K.N.2    Svendsen, W.3    Ou, H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.