MIMC reliability and electrical behavior defined by a physical layer property of the dielectric

Microelectronics Reliability

Volumn 48, Issue 8-9, 2008, Pages 1553-1556

  Ackaert, J ^a   Charavel, R ^a   Dhondt, K ^a   Vlachakis, B ^a   De Schepper, L ^a   Millecam, M ^a   Vandevelde, E ^a   Bogaert, P ^a   Iline, A ^a   De Backer, E ^a   Vlad, A ^b   Raskin, J P ^b  

^a ON SEMICONDUCTOR   (Belgium)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; CHARGE TRAPPING; CHEMICAL PROPERTIES; CONCENTRATION (PROCESS); DIELECTRIC DEVICES; ELECTRIC CHARGE; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC EQUIPMENT; ELECTRIC FIELDS; ELECTRIC PROPERTIES; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; ENERGY STORAGE; ERROR ANALYSIS; FEES AND CHARGES; FINANCE; IONIZATION OF GASES; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; METALS; OPTICAL PROPERTIES; REFRACTIVE INDEX; SILICON;

BREAK DOWN VOLTAGES; DIELECTRIC LAYERS; ELECTRICAL BEHAVIORS; ELECTRICAL PROPERTIES; H IGH CONCENTRATIONS; HIGH REFRACTIVE INDEX; HIGH-SI-CONTENT; LOCAL ELECTRIC FIELDS; METAL-INSULATOR-METAL CAPACITORS; PHYSICAL AND CHEMICAL PROPERTIES; PHYSICAL LAYER; PHYSICAL PROPERTIES; RELIABILITY IMPROVEMENT; TDDB LIFETIME; TRAPPED CHARGES;

DIELECTRIC MATERIALS;

EID: 50249108385     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.06.043     Document Type: Article

References (12)

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