Influences of low temperature silicon nitride films on the electrical performances of hydrogenated amorphous silicon thin film transistors

Journal of Physics D: Applied Physics

Volumn 41, Issue 24, 2008, Pages

  Huang, Jung Jie ^a   Liu, Chan Jui ^a   Lin, Hung Chien ^a   Tsai, Cheng Ju ^a   Chen, Yung Pei ^a   Hu, Guo Ren ^a   Lee, Cheng Chung ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; A-SI:H TFT; ACTIVE LAYER; BIAS STRESS; CAPACITANCE VOLTAGE MEASUREMENTS; CHEMICAL COMPOSITIONS; CONSTANT VOLTAGE STRESS; DEFECT GENERATION; ELECTRICAL DEGRADATION; ELECTRICAL PERFORMANCE; FIELD-EFFECT MOBILITIES; GATE DIELECTRIC LAYERS; HIGH FIELD EFFECT MOBILITY; HYDROGENATED AMORPHOUS SILICON THIN FILMS; INTERFACE QUALITY; LOW TEMPERATURES; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; POWER DENSITIES; RADIO FREQUENCIES; RADIO-FREQUENCY POWER; SILICON NITRIDE FILM; THRESHOLD VOLTAGE SHIFTS;

AMORPHOUS FILMS; DEGRADATION; GATE DIELECTRICS; GATES (TRANSISTOR); HYDROGENATION; PLASMA DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; SURFACE PROPERTIES; SURFACE ROUGHNESS; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; VENDING MACHINES;

AMORPHOUS SILICON;

EID: 77951247776     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/24/245502     Document Type: Article

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