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Volumn 94, Issue 25, 2009, Pages

Nanorod epitaxial lateral overgrowth of a -plane GaN with low dislocation density

(10) Ling, Shih Chun a Chao, Chu Li a,b Chen, Jun Rong a Liu, Po Chun b Ko, Tsung Shine a Lu, Tien Chang a Kuo, Hao Chung a Wang, Shing Chung a Cheng, Shun Jen a Tsay, Jenq Dar b

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE GAN; CRYSTAL QUALITIES; EPITAXIAL LATERAL OVERGROWTH; GAN TEMPLATE; LOW-DISLOCATION DENSITY; PLANE SAPPHIRE; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; THREADING DISLOCATION DENSITIES;

CORUNDUM; DISLOCATIONS (CRYSTALS); EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM NITRIDE; NANORODS; SEMICONDUCTING GALLIUM; SUPERCONDUCTING FILMS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 67649616867 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3158954 Document Type: Article

Times cited : (30)

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