Inhomogeneous injection in polar and nonpolar III-nitride light-emitters

Solid-State Electronics

Volumn 54, Issue 8, 2010, Pages 801-805

  Kisin, Mikhail V ^a   El Ghoroury, Hussein S ^a  

^a Ostendo Technologies Inc   (United States)

Author keywords

Diode lasers; Green gap; III Nitrides; Injection efficiency; LED

Indexed keywords

BARRIER LAYERS; DIODE LASERS; DIODE STRUCTURE; III-NITRIDE; III-NITRIDES; INHOMOGENEITIES; INJECTION EFFICIENCY; MULTIPLE QUANTUM WELLS; NON-POLAR; NONPOLAR STRUCTURES; OPTICAL EMISSIONS; POLAR STRUCTURES; POTENTIAL BARRIERS; RESIDUAL CHARGE;

DIODES; NITRIDES; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 77955327471     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.04.002     Document Type: Article

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