Carrier injection efficiency in nitride LEDs

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 5158-5161

  Lee, Dong S ^a   Byrnes, Daniel ^a   Parekh, Aniruddh ^a   Ting, Steve ^a   Quinn, William ^a  

^a Veeco Compound Semiconductor Inc   (United States)

Author keywords

A1. Characterization; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B3. Light emitting diodes

Indexed keywords

CIVIL AVIATION; CRYSTAL GROWTH; ELECTROLUMINESCENCE; EMISSION SPECTROSCOPY; LIGHT; LIGHT EMISSION; LIGHT SOURCES; LUMINESCENCE; NITRIDES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; STRUCTURAL OPTIMIZATION; VAPOR PHASE EPITAXY;

A1. CHARACTERIZATION; A3. METALORGANIC VAPOR-PHASE EPITAXY; ACTIVE LAYERS; B1. NITRIDES; B3. LIGHT-EMITTING DIODES; CARRIER DISTRIBUTIONS; CARRIER INJECTION EFFICIENCIES; CARRIER INJECTIONS; EMISSION EFFICIENCIES; LED STRUCTURES; MULTIPLE QUANTUM WELLS; OPTIMUM NUMBERS; P-N JUNCTIONS; PEAK WAVELENGTHS; PHOTO LUMINESCENCES; SLOPE EFFICIENCIES;

LIGHT EMITTING DIODES;

EID: 56249119513     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.041     Document Type: Article

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