The effects of recombination lifetime on efficiency and JV characteristics of InxGa1-xN/GaN quantum dot intermediate band solar cell

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 9, 2010, Pages 2353-2357

  Es'Haghi Gorji, Nima ^a   Movla, Hossein ^b   Sohrabi, Foozieh ^b   Hosseinpour, Ahmad ^c   Rezaei, Meisam ^d   Babaei, Hassan ^b  

^a Technical and Engineering Faculty of Bonab   (Iran)

^b UNIVERSITY OF TABRIZ   (Iran)

^c URMIA UNIVERSITY   (Iran)

^d SHARIF UNIVERSITY OF TECHNOLOGY   (Iran)

Author keywords

Energy conversion efficiency; InGaN QDs; QD intermediate solar cells

Indexed keywords

ACTIVE REGIONS; BAND GAPS; EXCITED CARRIERS; HOST MATERIALS; INGAN QDS; INTERMEDIATE BANDS; INTERMEDIATE-BAND SOLAR CELLS; J-V CHARACTERISTICS; P-I-N STRUCTURE; QUANTUM DOT; RECOMBINATION LIFETIME; RECOMBINATION MECHANISMS; SOLAR CELL STRUCTURES; SOLAR SPECTRUM; THIRD GENERATION;

CONVERSION EFFICIENCY; ENERGY CONVERSION; GALLIUM; OPTICAL WAVEGUIDES; SEMICONDUCTOR QUANTUM DOTS; SOLAR CELLS;

SOLAR ENERGY;

EID: 77955307413     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2010.05.014     Document Type: Article

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