Dependence of the radiative recombination lifetime upon electric field in silicon quantum dots embedded into SiO2

Europhysics Letters

Volumn 51, Issue 2, 2000, Pages 168-173

  Ouisse, T ^a,b   Nassiopoulou, A G ^a  

^a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^b Grenoble INP Phelma   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034636644     PISSN: 02955075     EISSN: None     Source Type: Journal    
DOI: 10.1209/epl/i2000-00527-x     Document Type: Article

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