Electron capture cross sections of InAs/GaAs quantum dots

Applied Physics Letters

Volumn 85, Issue 14, 2004, Pages 2908-2910

  Engstrom O ^a   Kaniewska, M ^b   Fu, Y ^a   Piscator, J ^a   Malmkvist, M ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHARGE CARRIERS; EIGENVALUES AND EIGENFUNCTIONS; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; FREE ENERGY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

FREE ENERGY LEVELS; STATIC MEASUREMENT; THERMAL EQUILIBRIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 8344254986     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1802377     Document Type: Article

References (17)

1. A. Anand, N. Carlsson, M.-E. Pistol, L. Samuelson, and W. Siefert, J. Appl. Phys. 84, 3747 (1998).
2. C. M. A. Kapteyn, F. Heinrichdorff, O. Stier, R. Heitz, M. Grundmann, N. D. Zakharov, and D. Bimberg, Phys. Rev. B 60, 14265 (1999).
3. C. M. A. Kapteyn, M. Lion, F. Heinrichsdorff, R. Heitz, M. Grundmann, and D. Bimberg, Physica E (Amsterdam) 7, 388 (2000).
4. C. M. A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, P. N. Brunkov, B. V. Volovik, S. G. Konnikov, A. R. Kovsh, and V. M. Ustinov, Appl. Phys. Lett. 76, 1573 (2000).
5. W.-H. Chang, W. Y. Chen, M. C. Cheng, C. Y. Lai, T. M. Hsu, N.-T. Yeh, and J.-I. Chyi, Phys. Rev. B 64, 125315 (2001).
6. S. Schulz, S. Schnull, Ch. Heyn, and W. Hansen, Phys. Rev. B 69, 195317 (2004).
7. O. Engström, M. Malmkvist, Y. Fu, H. Ö. Olafsson, and E. Ö. Sveinbjörnsson, Appl. Phys. Lett. 83, 3578 (2003).
8. O. Engström and A. Alm, J. Appl. Phys. 54, 5240 (1983).
9. P. T. Landsberg and O. Engström, Handbook of Semiconductors (North-Holland, Amsterdam, 1992), Vol. 1, p. 197.
10. S. M. Reiman and M. Manninen, Rev. Mod. Phys. 74, 1283 (2002).
11. O. Engström and P. T. Landsberg (unpublished).
12. D. V. Lang, J. Appl. Phys. 45, 3023 (1974).
13. Y. Fu, F. Ferdos, M. Sadeghi, S. M. Wang, and A. Larsson, J. Appl. Phys. 92, 3089 (2002).
14. S. K. Zhang, H. J. Zhu, F. Lu, Z. M. Jiang, and X. Wang, Phys. Rev. Lett. 82, 2622 (1999); 80, 3340 (1998).
15. S. K. Zhang, H. J. Zhu, F. Lu, Z. M. Jiang, and X. Wang, Phys. Rev. Lett. 82, 2622 (1999); 80, 3340 (1998).
16. T. Müller, F. F. Schrey, G. Strasser, and K. Unterrainer, Appl. Phys. Lett. 83, 3572 (2003).
17. T. Müller (private communication).