Optical properties of multi-stacked InAs/GaNAs strain-compensated quantum dots

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 2234-2238

  Oshima, Ryuji ^a   Nakamura, Yuta ^a   Takata, Ayami ^a   Okada, Yoshitaka ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

A1. Low dimensional structures; A3. Molecular beam epitaxy; B1. Alloys; B2. Semiconducting III V materials

Indexed keywords

GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POTENTIAL ENERGY; SEMICONDUCTOR QUANTUM DOTS;

LOW-DIMENSIONAL STRUCTURES; ROOM TEMPERATURE; STRAIN COMPENSATION LAYERS (SCLS);

INDIUM ARSENIDE;

EID: 41449104099     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.209     Document Type: Article

References (26)

1. Takemoto K., Sakuma Y., Hirose S., Usuki T., Yokoyama N., Miyazawa T., Takatsu M., and Arakawa Y. Jpn. J. Appl. Phys. 43 (2004) L993
2. Ishii-Hayase J., Akahane K., Yamamoto N., Kujiraoka M., Inoue J., Ema K., Tsuchiya M., and Sasaki M. J. Lumin. 119-120 (2006) 318
3. Arakawa Y., and Sakaki H. Appl. Phys. Lett. 40 (1982) 939
4. Sugawara M., Ebe H., Hatori N., Ishida M., Arakawa Y., Akiyama T., Otsubo K., and Nakata Y. Phys. Rev. B 69 (2004) 235332
5. Nozik A.J. Physica E 14 (2002) 115
6. Luque A., and Marti A. Phys. Rev. Lett. 78 (1997) 5014
7. Solomon G.S., Trezza J.A., Marshall A.F., and Harris Jr. J.S. Phys. Rev. Lett. 76 (1996) 952
8. Marti A., Lopez N., Antolin E., Canovas E., and Luque A. Appl. Phys. Lett. 90 (2007) 233510
9. Tatebayashi J., Nuntawong N., Xin Y.C., Wong P.S., Huang S.H., Hains C.P., Lester L.F., and Huffaker D.L. Appl. Phys. Lett. 88 (2006) 221107
10. Kim N.H., Ramamurthy P., Mawst L.J., Kuech T.F., Modak P., Goodnough T.J., Forbes D.V., and Kanskar M. J. Appl. Phys. 97 (2005) 093518
11. Zhang W., Uesugi K., and Suemune I. J. Appl. Phys. 99 (2006) 103103
12. Springholz G., Holy V., Pinczolits M., and Bauer G. Science 282 (1998) 734
13. Oshima R., Hashimoto T., Shigekawa H., and Okada Y. J. Appl. Phys. 100 (2006) 083110
14. Shimizu Y., Kobayashi N., Uedono A., and Okada Y. J. Crystal Growth 278 (2005) 553
15. Okada Y., Fujita T., and Kawabe M. Appl. Phys. Lett. 67 (1995) 676
16. Oshima R., Hashimoto T., Shigekawa H., and Okada Y. AIP Conf. Proc. 893 (2007) 811
17. Legrand B., Nys J.P., Grandidier B., Stiévenard D., Lemaître A., Gérard J.M., and Thierry-Mieg V. Appl. Phys. Lett. 74 (1999) 2608
18. Oshima R., Akahane K., Tsuchiya M., Shigekawa H., and Okada Y. J. Crystal Growth 301-302 (2007) 821
19. Wu J., Walukiewicz W., and Haller E.E. Phys. Rev. B 65 (2002) 233210
20. Weyers M., Sato M., and Ando H. Jpn. J. Appl. Phys. 31 (1992) L853
21. Brusaferri L., sanguinetti S., Grilli E., Guzzi M., Bignazzi A., Bogani F., Carraresi L., Colocci M., Bosacchi A., Frigeri P., and Franchi S. Appl. Phys. Lett. 69 (1996) 3354
22. Ilahi B., Sfaxi L., Maaref H., Bremond G., and Guillot G. Superlattices Microstructures 36 (2004) 55
23. Porsche J., Ruf A., Geiger M., and Scholz F. J. Crystal Growth 195 (1998) 519
24. Liang S., Zhu H.L., and Wang W. J. Appl. Phys. 100 (2006) 103503
25. Spruytte S.G., Larson M.C., Wampler W., Coldren C.W., Petersen H.E., and Harris Jr. J.S. J. Crystal Growth 227-228 (2001) 506
26. Kent P.R.C., and Zunger A. Phys. Rev. Lett. 86 (2001) 2613