Electrical properties of Al/CaF2/i-diamond metal-insulator-semiconductor field-effect-transistor fabricated by ultrahigh vacuum process

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 11 PART A, 1998, Pages

  Yun, Young ^a   Maki, Tetsuro ^a   Tanaka, Hiroyuki ^a   Shirakawa, Yusuke ^a   Kobayashi, Takeshi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

CaF2; Diamond; MISFET; Surface state; UHV

Indexed keywords

CALCIUM COMPOUNDS; ELECTRIC VARIABLES MEASUREMENT; SEMICONDUCTING DIAMONDS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE;

SURFACE STATE DENSITY; ULTRAHIGH VACUUM (UHV) PRESSURE;

MISFET DEVICES;

EID: 0032208786     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1293     Document Type: Article

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