Diamond-based RF power transistors: Fundamentals and applications

Diamond and Related Materials

Volumn 16, Issue 4-7 SPEC. ISS., 2007, Pages 1010-1015

  Kasu, M ^a   Ueda, K ^a   Yamauchi, Y ^a   Tallaire, A ^a   Makimoto, T ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Diamond; Hydrogen passivation; RF characteristics; Transistor

Indexed keywords

CURRENT DENSITY; LEAKAGE CURRENTS; NATURAL FREQUENCIES; POWER ELECTRONICS;

GATE CONTACT; H-SURFACE TERMINATION; HYDROGEN PASSIVATION; RF CHARACTERISTICS;

FIELD EFFECT TRANSISTORS;

EID: 34047249070     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2006.12.046     Document Type: Article

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