Analysis of passivated diamond surface channel FET in dual-gate configuration - Localizing the surface acceptor

Diamond and Related Materials

Volumn 19, Issue 2-3, 2010, Pages 166-170

  Kueck, D ^a   Schmidt, A ^a   Denisenko, A ^a   Kohn, E ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

Charge centroid; FET; H termination; Lateral charge injection; Passivation

Indexed keywords

CHARGE CENTROID; DIAMOND SURFACES; DRAIN BIAS; DUAL GATES; FET; GATE CONFIGURATION; H-TERMINATION; MOS GATES; MOS-FET; MOSFET STRUCTURES; PASSIVATION LAYER; POTENTIAL PROBES; SHEET CHARGES; SURFACE CHANNEL;

CHARGE INJECTION; GATE DIELECTRICS; GATES (TRANSISTOR); MESFET DEVICES; MOSFET DEVICES; SURFACE STRUCTURE;

PASSIVATION;

EID: 74849122556     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2009.09.003     Document Type: Article

References (25)

1. Kawarada H. Surf. Sci. Rep. 26 (1996) 205
2. Kasu M., Ueda K., Yamauchi Y., Tallaire A., and Makimoto T. Diamond Relat. Mater. 16 (2007) 1010
3. Aleksov A., Kubovic M., Kaeb N., Spitzberg U., Bergmaier A., Dollinger G., Bauer T., Schreck M., Stritzker B., and Kohn E. Diamond Relat. Mater. 12 (2003) 391
4. Lansley S.P., Looi H.J., Wang Y., Whitfield M.D., and Jackman R.B. Appl. Phys. Lett. 74 4 (1999) 615
5. Ueda K., Kasu M., Yamauchi Y., Makimoto T., Schwitters M., Twitchen D.J., Scarsbrook G.A., and Coe S.E. Electron Device Lett. 27 7 (2006) 570
6. Hirama K., Takayanagi H., Yamauchi S., Jingu Y., Umezawa H., and Kawarada H. Int. Electron Devices Meeting (IEDM) (2007) 873
7. Kawakami N., Yokota Y., Tachibana T., Hayashi K., and Kobashi K. Diamond Relat. Mater. 14 (2005) 2015
8. Matsudaira H., Takuya A., Umezawa H., Miyamoto S., Ishizaka H., Tachiki M., and Kawarada H. Diamond Relat. Mater. 12 (2003) 1814
9. Kawarada H., Araki Y., Sakai T., Ogawa T., and Umezawa H. Phys. Status Solidi A 185 1 (2001) 79
10. Sakai T., Araki Y., Kanazawa H., Umezawa H., Tachiki M., and Kawarada H. Jpn. J. Appl. Phys. 41 (2002) 2595
11. Garrido J.A. In: Sussman R. (Ed). Biofunctionalization of Diamond Surfaces: Fundamentals and Applications"; CVD Diamond for Electronic Devices and Sensors, Chapter 16 (2009), Wiley
12. May P.W., Stone J.C., Ashfold M.N.R., Hallam K.R., Wang W.N., and Fox N.A. Diamond Relat. Mater. 7 (1998) 671
13. Maier F., Riedel M., Mantel B., Ristein J., and Ley L. Phys. Rev. Lett. 85 16 (2000) 3472
14. Denisenko A., Aleksov A., Pribil A., Gluche P., Ebert W., and Kohn E. Diamond Relat. Mater. 9 (2000) 1138
15. Kubovic M., Janischowsky K., and Kohn E. Diamond Relat. Mater. 14 (2005) 514
16. Kubovic M., Kasu M., Yamauchi Y., Ueda K., and Kageshima H. Diamond Relat. Mater. 18 (2009) 769
17. B. Rezek, H. Kozak, A. Kromka, Thin Solid Films 517 (13) (May 2009) 3738.
18. Kueck D., Jooss S., and Kohn E. Diamond Relat. Mater. 18 (2009) 1306
19. Neuburger M., Allgaier J., Zimmermann T., Daumiller I., Kunze M., Birkhahn R., Gotthold D.W., and Kohn E. Electron Device Lett. 25 5 (2004) 256
20. Kasu M., Ueda K., Kageshima H., and Yamauchi Y. Diamond Relat. Mater. 17 (2008) 741
21. Kawarada H. In: Nebel C.E., and Ristein J. (Eds). Diamond Field Effect Transistors Using H-Terminated Surfaces"; Thin Film Diamond II, Chapter 7 (2004), Elsevier
22. Sze S.M. Physics of Semiconductor devices. Third edition (2007), John Wiley & Sons Chapter 4
23. Shatzkes M., and Av-Ron M. J. Appl. Phys. 47 7 (1976) 3192
24. Kubovic M., Denisenko A., Ebert W., Kasu M., Kallfass I., and Kohn E. Diamond Relat. Mater. 13 (2004) 755
25. Saito W., Takada Y., Kuraguchi M., Tsuda K., Omura I., and Ogura T. Jpn. J. Appl. Phys. 43 4B (2004) 2239