Surface Conductivity of Diamond

CVD Diamond for Electronic Devices and Sensors

Volumn , Issue , 2009, Pages 69-102

  Ley, Lothar ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Air induced surface conductivity; Band profile and carrier density; Diamond surface conductivity; Fullerene induced surface conductivity; Hydrogen termination and negative electron affinity; Metal semiconductor FETs (MESFETs); Surface conductivity (SC); X ray induced photoelectron spectroscopy (XPS)

Indexed keywords

EID: 84948809211     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/9780470740392.ch4     Document Type: Chapter

References (81)

1. Albin, S. and L. Watkins (1990). Electrical properties of hydrogenated diamond. Applied Physics Letters 56(15): 1454-1456.
2. Aleksov, A., A. Denisenko, et al. (2002). RF performance of surface channel diamond FETs with sub-micron gate length. Diamond and Related Materials 11(3-6): 382-386.
3. Aoki, M. and H. Kawarada (1994). Electric properties of metal/diamond interfaces utilising hydrogen-terminated surfaces of homoepitaxial diamonds. Japanese Journal of Applied Physics Part 2-Letters & Express Letters 33(5B): L708-L711.
4. Bandis, C. and B. B. Pate (1995). Photoelectric-emission from negative-electron-affinity diamond(111) surfaces-exciton breakup versus conduction-band emission. Physical Review B 52(16): 12056-12071.
5. Boltalina, O. V. and S. H. Strauss (2004). Encyclopedia of Nano-Science and Nanotechnology: DOI 10.1081/EENN 120013608.
6. Chakrapani, V., JC Angus et al. (2007). Charge transfer equilibria between diamond and an aqueous oxygen electrochemical redox couple. Science 318 (5855): 1424-1430.
7. Collins, A. T. (1994). Breakdown field and saturated carrier velocity in diamond. Properties and Growth of Diamond. G. Davies. London, INSPEC: 288.
8. Cui, J. B., J. Ristein and L. Ley (1998). Electron affinity of the bare and hydrogen covered single crystal diamond (111) surface. Phys. Rev. Lett. 81: 429-432.
9. Cui, J. B., J. Ristein, et al. (1999). Low-threshold electron emission from diamond. Physical Review B 60(23): 16135-16142.
10. Foord, J. S., C. H. Lau, et al. (2002). Influence of the environment on the surface conductivity of chemical vapor deposition diamond. Diamond and Related Materials 11(3-6): 856-860.
11. Gildenblat, G. S., S. A. Grot, et al. (1991). The electrical properties and device applications of homoepitaxial and polycrystalline diamond films. Proceedings of the IEEE 79(5): 647-668.
12. Gluche, P., A. Aleksov, et al. (1997). Diamond surface-channel FET structure with 200 V breakdown voltage. IEEE Electron Device Letters 18(11): 547-549.
13. Goss, J. P., B. Hourahine, et al. (2001). p-type surface doping of diamond: a first-principles study. Journal of Physics-Condensed Matter 13(40): 8973-8978.
14. Grot, S. A., G. S. Gildenblat, et al. (1990). The effect of surface treatment on electrical properties of metal contacts to boron doped homoepitaxial diamond films. IEEE Electron Device Letters 11: 100-102.
15. Gunnarson, O. (1997). Superconductivity in fullerides. Review of Modern Physics 69: 575-606.
16. Haddon, R. C., A. S. Perel, et al. (1995). C-60 thin-film transistors. Applied Physics Letters 67(1): 121-123.
17. Hayashi, K., S. Yamanaka, et al. (1996). Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurements. Applied Physics Letters 68(3): 376-378.
18. Hayashi, K., S. Yamanaka, et al. (1997). Investigation of the effect of hydrogen on electrical and optical properties in chemical vapor deposited on homoepitaxial diamond films. Journal of Applied Physics 81(2): 744-753.
19. Himpsel, F. J., J. A. Knapp, et al. (1979). Quantum photoyield of diamond(111)-a stable negative-affinity emitter. Physical Review B 20(2): 624.
20. Jiang, N. and T. Ito (1999). Electrical properties of surface conductive layers of homoepitaxial diamond films. Journal of Applied Physics 85(12): 8267-8273.
21. 48: Coulomb barriers in doubly charged anions. Physical Review Letters 73(21): 2821.
22. Kasu, M., K. Ueda, et al. (2005). 2W/mm output power density at 1 GHz for diamond FETs. Electronics Letters 41(22): 1249-1250.
23. Kawarada, H., M. Aoki, et al. (1994). Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamonds. Applied Physics Letters 65(12): 1563-1565.
24. Kawarada, H., Y. Araki, et al. (2001). Electrolyte-solution-gate FETs using diamond surface for biocompatible ion sensors. Physica Status Solidi A-Applied Research 185(1): 79-83.
25. Landstrass, M. I. and K. V. Ravi (1989a). Hydrogen passivation of electrically active defects in diamond. Applied Physics Letters 55: 1391.
26. Landstrass, M. I. and K. V. Ravi (1989b). Resistivity of chemical vapor deposited diamond films. Applied Physics Letters 55: 975.
27. Lide, D. R. (Ed.) (1996). CRC Handbook of Chemistry and Physics. New York, CRC Press, Inc.
28. 60. Physical Review Letters 68(26): 3924.
29. Loh, K., X. Xie, et al. (2002 ). A spectroscopic study of the negative electron affinity of cesium oxide-coated diamond (111) and theoretical calculation of the surface density-of-states on oxygenated diamond (111) Diamond and Related Materials 11: 1379-1384
30. Looi, H. J., R. B. Jackman, et al. (1998). High carrier mobility in polycrystalline thin film diamond. Applied Physics Letters 72(3): 353-355.
31. Maier, F., M. Riedel, et al. (2000). Origin of surface conductivity in diamond. Physical Review Letters 85(16): 3472-3475.
32. Maier, F., J. Ristein, et al. (2001). Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces. Physical Review B 64(16): 165411.
33. Maki, T., S. Shikama, et al. (1992). Hydrogenation Effect of Single Crystal Diamond Surface. Japanese Journal of Applied Physics Part 2-Letters & Express Letters 31(10A): L1446-L1449.
34. Mantel, B. F., M. Stammler, et al. (2001). The correlation between surface conductivity and adsorbate coverage on diamond as studied by infrared spectroscopy. Diamond and Related Materials 10(3-7): 429-433.
35. Mönch, W. (1995). Semiconductor Surfaces and Interfaces. Berlin, Springer-Verlag.
36. Nunez-Regueiro, M., L. Marques, et al. (1995). Polymerized fullerite structures. Physical Review Letters 74(2): 278-281.
37. Pankove, J. I. and N. M. Johnson (Eds.) (1991). Hydrogen in Semiconductors. Semiconductors and Semimetals. Boston, Academic Press.
38. Piantanida, G., A. Breskin, et al. (2001). Effect of moderate heating on the negative electron affinity and photoyield of air-exposed hydrogen-terminated chemical vapor deposited diamond. Journal of Applied Physics 89(12): 8259-8264.
39. Pickett, W. E. (1994). Negative electron affinity and low work function surface: cesium on oxygenated diamond (100). Physical Review Letters 73(12): 1664 LP-1667.
40. Pleskov, Y. V., A. Y. Sakharova, et al. (1987). Journal of Electroanalytical Chemistry 228: 19.
41. Rezek, B., C. Sauerer, et al. (2003). Fermi level on hydrogen terminated diamond surfaces. Applied Physics Letters 82(14): 2266-2268.
42. Rezek, B., H. Watanabe, et al. (2006a). High carrier mobility on hydrogen terminated _100 diamond surfaces. Applied Physics Letters 88(4): 042110.
43. Rezek, B., H. Watanabe, et al. (2006b). Ion-sensitive field effect transistor on hydrogenated diamond. Diamond and Related Materials 15(4-8): 673-677.
44. Ri, S. G., T. Mizumasa, et al. (1995). Formation mechanism of p-type surface conductive layer on deposited diamond films. Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers 34(10): 5550-5555.
45. Ri, S. G., K. Tashiro, et al. (1999). Hall effect measurements of surface conductive layer on undoped diamond films in NO2 and NH3 atmospheres. Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers 38(6A): 3492-3496.
46. Riedel, M., J. Ristein, et al. (2004a). The impact of ozone on the surface conductivity of single crystal diamond. Diamond and Related Materials 13(4-8): 746-750.
47. Riedel, M., J. Ristein, et al. (2004b). Recovery of surface conductivity of H-terminated diamond after thermal annealing in vacuum. Physical Review B 69(12).
48. Ristein, J. (2004). Structural and electronic properties of diamond surfaces. Thin Film Diamond. J. R. C. E. Nebel. Amsterdam, Elsevier. 2: 37-93.
49. Ristein, J. (2006). Surface transfer doping of diamond. Journal of Physics D-Applied Physics 39(4): R71-R81.
50. Ristein, J., M. Riedel, et al. (2001). Surface conductivity of diamond as a function of nitrogen doping. Physica Status Solidi A-Applied Research 186(2): 249-256.
51. Ristein, J., M. Riedel, et al. (2002). Surface conductivity of nitrogen-doped diamond. Diamond and Related Materials 11(3-6): 359-364.
52. Ristein, J., M. Riedel, et al. (2004). Electrochemical surface transfer doping-The mechanism behind the surface conductivity of hydrogen-terminated diamond. Journal of the Electrochemical Society 151(10): E315-E321.
53. Ristein, J., W. Stein, et al. (1997). Defect spectroscopy and determination of the electron diffusion length in single crystal diamond by total photoelectron yield spectroscopy. Physical Review Letters 78(9): 1803-1806.
54. Ristein, J., P. Strobel, et al. (2006). Surface conductivity of diamond: a novel doping mechanism. Advanced Science and Technology 48: 93-102.
55. Rutter, M. J. and J. Robertson (1998). Ab initio calculation of electron affinities of diamond surfaces. Physical Review B 57(15): 9241-9245.
56. Sato, N. (1998). Electrochemistry at Metal and Semiconductors Electrodes. Amsterdam, Elsevier.
57. Seah, M. P. and W. A. Dench (1979). Surface and Interface Analysis. 1: 2.
58. Shirafuji, J. and T. Sugino (1996). Electrical properties of diamond surfaces. Diamond and Related Materials 5(6-8): 706-713.
59. Snidero, E., D. Tromson, et al. (2003). Influence of the postplasma process conditions on the surface conductivity of hydrogenated diamond surfaces. Journal of Applied Physics 93(5): 2700-2704.
60. Snidero, E., D. Tromson, et al. (2004). Dynamical aspects of the surface layer build up on diamond and improvement of the conductivity stability. Diamond and RelatedMaterials 13(4-8): 761-764.
61. Song, K. S., M. Degawa, et al. (2004). Surface-modified diamond field-effect transistors for enzyme-immobilized biosensors. Japanese Journal of Applied Physics Part 2-Letters & Express Letters 43(6B): L814-L817.
62. Song, K. S., T. Hiraki, et al. (2007). Miniaturized diamond field-effect transistors for application in biosensors in electrolyte solution. Applied Physics Letters 90(6).
63. Sque, S. J., R. Jones, et al. (2005). First-principles study of C-60 and C60F36 as transfer dopants for p-type diamond. Journal of Physics-Condensed Matter 17(2): L21-L26. Strobel, P. Private communication.
64. Strobel, P., M. Riedel, et al. (2004). Surface transfer doping of diamond. Nature 430(6998): 439-441.
65. Strobel, P., M. Riedel, et al. (2005). Surface transfer doping of diamond by fullerene. Diamond and Related Materials 14(3-7): 451-458.
66. Strobel, P., J. Ristein, et al. (2006). Surface conductivity induced by fullerenes on diamond: passivation and thermal stability. Diamond and Related Materials 15(4-8): 720-724.
67. Su, C. and J. C. Lin (1998). Thermal desorption of hydrogen from the diamond C(100) surface. Surface Science 406(1-3): 149-166.
68. Tachiki, M., H. Seo, et al. (2002). Fabrication of single-hole transistors on hydrogenated diamond surface using atomic force microscope. Applied Physics Letters 81(15): 2854-2856.
69. Takeuchi, D., C. E. Nebel, et al. (2006). Photoelectron emission properties of hydrogen terminated intrinsic diamond. Journal of Applied Physics 99: 086102.
70. Takeuchi, D., M. Riedel, et al. (2003). Surface band bending and surface conductivity of hydrogenated diamond. Physical Review B 68(4).
71. Topping, J. (1927). Proc. R. Soc. London A114: 67.
72. Trasatti, S. (1986). The absolute electrode potential: an explanatory note. Pure and Applied Chemistry 58(7): 955-966.
73. Tsugawa, K., K. Kitatani, et al. (1999). High-performance diamond surface-channel field-effect transistors and their operation mechanism. Diamond and Related Materials 8(2-5): 927-933.
74. Ueda, K., M. Kasu, et al. (2006). Characterization of high-quality polycrystalline diamond and its high FET performance. Diamond and Related Materials 15(11-12): 1954-1957.
75. Umezawa, H., K. Tsugawa, et al. (1999). high-performance diamond metal-semiconductor field-effect transistor with 1micrometer gate length. Japanese Journal of Applied Physics Part 2-Letters & Express Letters 38(11A): L1222-L1224.
76. Vidali, G., M. W. Cole, et al. (1983). Helium as a probe of the (111) surface of diamond. Physical Review Letters 51(2): 118.
77. Wang, Y. M., K. W. Wong, et al. (2000). Recent studies on diamond surfaces. Diamond and Related Materials 9(9-10): 1582-1590.
78. Yang, J. H., K. S. Song, et al. (2006). Characterization of direct immobilized probe DNA on partially functionalized diamond solution-gate field-effect transistors. Japanese Journal of Applied Physics Part 2-Letters & Express Letters 45(42-45): L1114-L1117.
79. Yang, S. H., C. L. Pettiette, et al. (1987). UPS of buckminsterfullerene and other large clusters of carbon. Chemical Physics Letters 139(3-4): 233-238.
80. Yang, W. S. and R. J. Hamers (2004). Fabrication and characterization of a biologically sensitive field-effect transistor using a nanocrystalline diamond thin film. Applied Physics Letters 85(16): 3626-3628.
81. Zhang, Z., M. Wensell, et al. (1995). Surface-structures and electron-affinities of bare and hydrogenated diamond C(100) surfaces. Physical Review B 51(8): 5291-5296.