Investigation of mask selectivities and diamond etching using microwave plasma-assisted etching

Diamond and Related Materials

Volumn 19, Issue 7-9, 2010, Pages 778-782

  Tran, D T ^a   Fansler, C ^a   Grotjohn, T A ^a,b   Reinhard, D K ^a,b   Asmussen, J ^a,b  

^a MICHIGAN STATE UNIVERSITY   (United States)

^b Fraunhofer Center for Coatings and Laser Applications   (United States)

Author keywords

Diamond etching; ECR plasma; Etch selectivity; Masks

Indexed keywords

DIAMOND SUBSTRATES; ECR PLASMA; ETCH MASK; ETCH RATES; ETCH SELECTIVITY; FEATURE SIZES; FEED GAS; MASK FEATURES; MICROMASKING; MICROWAVE PLASMA; SELECTIVITY RATIO; SILICON DIOXIDE;

ALUMINUM; ARGON; ETCHING; OXYGEN; PHOTORESISTS; PLASMA APPLICATIONS; PLASMAS; SILICA; SILICON NITRIDE; SULFUR; SULFUR HEXAFLUORIDE; TITANIUM; TITANIUM NITRIDE;

DIAMONDS;

EID: 77955229723     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2010.02.001     Document Type: Article

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