Fabrication of diamond in-plane-gated field effect transistors using oxygen plasma etching

Diamond and Related Materials

Volumn 12, Issue 3-7, 2003, Pages 408-412

  Banno, Tokishige ^a,b   Tachiki, Minoru ^a,b   Nakazawa, Kazushi ^a,b   Sumikawa, Yu ^a,b   Umezawa, Hitoshi ^a,b   Kawarada, Hiroshi ^a,b,c  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b WASEDA UNIVERSITY   (Japan)

^c FCT Project/JFCC   (Japan)

Author keywords

Diamond properties applications; Gate leakage; In plane gate; Oxygen plasma

Indexed keywords

DIAMONDS; ELECTRIC FIELDS; LEAKAGE CURRENTS; PLASMA ETCHING; THRESHOLD VOLTAGE;

SINGLE-HOLE TRANSISTORS;

FIELD EFFECT TRANSISTORS;

DIAMOND;

EID: 0037900876     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(03)00039-6     Document Type: Article

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