Removing gold seed-layer materials using reactive ion etch

MICRO

Volumn 21, Issue 6, 2003, Pages 47-55

  Werbaneth, Paul ^a   Lester, Tim ^b   Pakulska, Jadwiga ^b  

^a Tegal   (United States)

^b NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GOLD; METALLIZING; PLASMA DEVICES; REACTIVE ION ETCHING;

GOLD SEED LAYERS;

MICROELECTRONIC PROCESSING;

EID: 0042342526     PISSN: 10810595     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

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2. R Williams, Modern GaAs Processing Methods (Norwood, MA: Artech House, 1990), 272-273.
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6. P Werbaneth et al., "The Reactive Ion Etching of Au on GaAs Substrates in a High Density Plasma Etch Reactor," in 1999 International Conference on Gallium Arsenide Manufacturing Technology Digest of Papers (St. Louis: GaAs Mantech, 2000), 31-34.
7. P Werbaneth et al., "Pt/PZT/Pt and Pt/Barrier Stack Etches for MEMS Devices in a Dual Frequency High Density Plasma Reactor," in Proceedings of the 2002 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (Piscataway, NJ: IEEE, 2002), 177-183.
8. J Coburn, Plasma Etching and Reactive Ion Etching (New York: American Institute of Physics, 1982), 78.