New etching process for device fabrication using diamond

Diamond and Related Materials

Volumn 13, Issue 11-12, 2004, Pages 2207-2210

  Hwang, D S ^a   Saito, T ^a   Fujimori, N ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Device fabrication; Diamond; Etching; ICP

Indexed keywords

ANISOTROPY; CONTAMINATION; DIAMONDS; ELECTRON BEAMS; FABRICATION; INDUCTIVELY COUPLED PLASMA; POWER ELECTRONICS; SINGLE CRYSTALS; SUBSTRATES;

BREAK-DOWN VOLTAGE; DEVICE FABRICATION; ELECTRON BEAM EVAPORATION METHOD; NEGATIVE ELECTRON AFFINITY (NEA);

REACTIVE ION ETCHING;

EID: 7544219933     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2004.07.020     Document Type: Conference Paper

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