Strain relaxation in AlN/GaN heterostructures grown by molecular beam epitaxy

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 11, 2008, Pages 2569-2572

  Dimitrakopulos, G P ^a   Komninou, Ph ^a   Kehagias, Th ^a   Sahonta, S L ^a   Kioseoglou, J ^a   Vouroutzis, N ^a   Hausler, I ^b   Neumann, W ^b   Iliopoulos, E ^c,d   Georgakilas, A ^c,d   Karakostas, Th ^a  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b HUMBOLDT UNIVERSITY   (Germany)

^c UNIVERSITY OF CRETE   (Greece)

^d INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ALN LAYERS; ELASTIC STRAINS; HETEROSTRUCTURE; HETEROSTRUCTURES; MISFIT DISLOCATIONS; STRAIN DISTRIBUTIONS; STRAIN PARTITIONING; THREADING DISLOCATIONS; ZIG ZAGS;

CRYSTAL GROWTH; GALLIUM NITRIDE; MICROSCOPIC EXAMINATION; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; STRAIN CONTROL; STRAIN RELAXATION;

HETEROJUNCTIONS;

EID: 55849147655     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200780137     Document Type: Conference Paper

References (21)

1. V. V. Lundin, E. E. Zavarin, A. I. Besulkin, A. G. Gladyshev, A. V. Sakharov, M. F. Kokorev, N. M. Shmidt, A. F. Tsatsul'nikov, N, N. Ledentsov, Zh. I. Alferov, and R. Kakanakov, Semiconductors 38, 1323 (2004).
2. S. J. Pearton, F. Ren, A. P. Zhang, and K. P. Lee, Mater. Sci. Eng. R 30, 55 (2000).
3. I. Waki, C. Kumtornkittikul, Y. Shimogaki, and Y. Nakano, Appl. Phys. Lett, 82, 4465 (2003).
4. C. McAleese, M. J. Kappers, F. D. G. Rayment, P. Cherns, and C. J. Humphreys, J. Cryst. Growth 272, 475 (2004).
5. H. Amano and I. Akasaki, Opt. Mater. 19, 219 (2002).
6. T. A. Lafford, P. J. Parbrook, and B. K. Tanner, Appl. Phys. Lett. 83, 5434 (2003).
7. S. R. Lee, D. D, Koleske, K. C. Cross, J. A. Floro, K. E. Waldrip, A. T. Wise, and S, Mahajan, Appl. Phys. Lett. 85, 6164 (2004).
8. S. J. Hearne, J. Han, S. R. Lee, J. A. Floro, D. M. Follstaedt, E. Chason, and I. S. T. Tsong, Appl. Phys. Lett. 76, 1534 (2000).
9. J.-M. Bethoux and P. Vennéguès, J. Appl. Phys. 97 123504 (2005).
10. R. Kröger, C. Kruse, C. Roder, D. Hommel, and A. Rosenauer, phys. stat. sol. (b) 243, 1533 (2006).
11. R. Liu, J. Mei, S. Shrinivasan, F. A. Ponce, H. Oiniya, Y. Narukawa, and T. Mukai, Appl. Phys. Lett. 89, 201911 (2006).
12. A. Bourret, C. Adelmann, B. Daudin, J.-L. Rouvière, G. Feuillet, and G. Mula, Phys. Rev. B, 63, 245307 (2001).
13. J. A. Floro, D. M. Follstaedt, P. Provencio, S. J. Hearne, and S. R. Lee, J. Appl. Phys. 96, 7087 (2004).
14. P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, S. P. DenBaars, and J. S. Speck, J. Appl. Phys. 97, 103534 (2005).
15. D. M. Follstaedt, S. R. Lee, P. P. Provencio, A. A. Allerman, J. A. Floro, and M. H. Crawford, Appl. Phys. Lett. 87, 121112 (2005).
16. T. Koyama, M. Sugawara, Y. Uchinuma, J. F. Kaeding, R. Sharma, T. Onuma, S. Nakamura, and S. F. Chichibu, phys. stat. sol. (a) 203, 1603 (2006).
17. A. D. Bykhovski, B. L. Gelmont, and M. S. Shur, J. Appl. Phys. 78, 3691 (1995).
18. M. J. Hytch and F. Houdellier, Microelectron. Eng. 84, 460 (2007).
19. R. Bierwolf, M. Hohenstein, F. Phillipp, O. Brandt, G.E. Crook, and K. Ploog, Ultramicroscopy 49, 273 (1993).
20. A.F. Wright, J. Appl. Phys. 82, 2833 (1997).
21. G. P. Dimitrakopulos, Ph, Komninou, Th. Kehagias, A. Delimitis, J. Kioseoglou, S.-L. Sahonta, E. Iliopoulos, A. Georgakilas, and Th. Karakostas, in press; J. Phys. Conf. Ser., Proc. XXV Conf. on the Microscopy of Semiconduct-ing Materials 2-5 April 2007, Churchill College, Cambridge (2007).